GB1003023A - Process for the production of doped semiconductor materials - Google Patents
Process for the production of doped semiconductor materialsInfo
- Publication number
- GB1003023A GB1003023A GB3687263A GB3687263A GB1003023A GB 1003023 A GB1003023 A GB 1003023A GB 3687263 A GB3687263 A GB 3687263A GB 3687263 A GB3687263 A GB 3687263A GB 1003023 A GB1003023 A GB 1003023A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- conductor material
- elements
- gallium
- aluminium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 8
- 239000000463 material Substances 0.000 title abstract 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 239000004411 aluminium Substances 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052733 gallium Inorganic materials 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000000374 eutectic mixture Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052744 lithium Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/28—Details of pulse systems
- G01S7/2806—Employing storage or delay devices which preserve the pulse form of the echo signal, e.g. for comparing and combining echoes received during different periods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Remote Sensing (AREA)
- Radar, Positioning & Navigation (AREA)
- Computer Networks & Wireless Communication (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,003,023. Semi-conductor devices. SIEMENS & HALSKE. Sept. 19, 1963 [Sept. 21, 1962], No. 36872/63. Drawings to Specification. Heading H1K. A semi-conductor material is highly doped with two or more elements which produce the same type of conductivity, the total solubility of the doping elements in the semi-conductor material being greater than that of any one alone. Each doping element forms a eutectic mixture with the semi-conductor material, and the mean of the atomic radii of the doping elements is approximately equal to the atomic radius of the semi-conductor material (if this is an element) or of the element which is replaced in the semi-conductor crystal lattice (if the semi-conductor material is a compound). Examples given of suitable combinations of doping elements in silicon or germanium include phosphorus with arsenic, aluminium with gallium, boron and indium with either aluminium or gallium, lithium with either phosphorus or arsenic, and copper or zinc with either boron or aluminium or gallium. At least two elements from Group II or from Group VI may be incorporated as doping elements in an A III B V compound. Embodiments described include a tunnel diode and the emitter zone of a transistor.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES81606A DE1292258B (en) | 1962-09-21 | 1962-09-21 | Method for producing a higher degree of doping in semiconductor materials than the solubility of a foreign substance in the semiconductor material allows |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1003023A true GB1003023A (en) | 1965-09-02 |
Family
ID=7509728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3687263A Expired GB1003023A (en) | 1962-09-21 | 1963-09-19 | Process for the production of doped semiconductor materials |
Country Status (3)
| Country | Link |
|---|---|
| CH (1) | CH443233A (en) |
| GB (1) | GB1003023A (en) |
| NL (1) | NL297953A (en) |
-
0
- NL NL297953D patent/NL297953A/xx unknown
-
1963
- 1963-09-12 CH CH1126163A patent/CH443233A/en unknown
- 1963-09-19 GB GB3687263A patent/GB1003023A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH443233A (en) | 1967-09-15 |
| NL297953A (en) |
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