GB843407A - Improvements in and relating to semi-conductor devices - Google Patents
Improvements in and relating to semi-conductor devicesInfo
- Publication number
- GB843407A GB843407A GB37077/56A GB3707757A GB843407A GB 843407 A GB843407 A GB 843407A GB 37077/56 A GB37077/56 A GB 37077/56A GB 3707757 A GB3707757 A GB 3707757A GB 843407 A GB843407 A GB 843407A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- germanium
- silicon
- relating
- conductor devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052732 germanium Inorganic materials 0.000 abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- ORWQBKPSGDRPPA-UHFFFAOYSA-N 3-[2-[ethyl(methyl)amino]ethyl]-1h-indol-4-ol Chemical compound C1=CC(O)=C2C(CCN(C)CC)=CNC2=C1 ORWQBKPSGDRPPA-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000005204 segregation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
843,407. Semi-conductor devices. SYLVANIATHORN COLOUR TELEVISION LABORATORIES Ltd. Dec. 2, 1957 [Dec. 4, 1956], No. 37077/56. Drawings to Specification. Class 37. A semi-conductor device is produced by alloying a germanium element to a silicon element 15 produce an alloy region between germanium-free silicon and silicon-free germanium. Impurities may be added to one or both materials, the heating, impurities and segregation coefficients &c. being such that PN, NN+, PP +, PNIP, drift and hook transistors and other such devices may be produced. A plurality of germanium element may be allowed to a single silicon element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB37077/56A GB843407A (en) | 1956-12-04 | 1957-12-02 | Improvements in and relating to semi-conductor devices |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3707756 | 1956-12-04 | ||
| GB37077/56A GB843407A (en) | 1956-12-04 | 1957-12-02 | Improvements in and relating to semi-conductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB843407A true GB843407A (en) | 1960-08-04 |
Family
ID=26263326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB37077/56A Expired GB843407A (en) | 1956-12-04 | 1957-12-02 | Improvements in and relating to semi-conductor devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB843407A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1166938B (en) * | 1960-07-01 | 1964-04-02 | Siemens Ag | Method for manufacturing a semiconductor device |
| US3163562A (en) * | 1961-08-10 | 1964-12-29 | Bell Telephone Labor Inc | Semiconductor device including differing energy band gap materials |
| US3234057A (en) * | 1961-06-23 | 1966-02-08 | Ibm | Semiconductor heterojunction device |
-
1957
- 1957-12-02 GB GB37077/56A patent/GB843407A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1166938B (en) * | 1960-07-01 | 1964-04-02 | Siemens Ag | Method for manufacturing a semiconductor device |
| US3234057A (en) * | 1961-06-23 | 1966-02-08 | Ibm | Semiconductor heterojunction device |
| US3163562A (en) * | 1961-08-10 | 1964-12-29 | Bell Telephone Labor Inc | Semiconductor device including differing energy band gap materials |
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