GB1011504A - Fabrication of semiconductor devices - Google Patents

Fabrication of semiconductor devices

Info

Publication number
GB1011504A
GB1011504A GB3499364A GB3499364A GB1011504A GB 1011504 A GB1011504 A GB 1011504A GB 3499364 A GB3499364 A GB 3499364A GB 3499364 A GB3499364 A GB 3499364A GB 1011504 A GB1011504 A GB 1011504A
Authority
GB
United Kingdom
Prior art keywords
layer
conductivity type
region
semi
parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3499364A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1011504A publication Critical patent/GB1011504A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,011,504. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Aug. 26, 1964 [Aug. 27, 1963], No. 34993/64. Addition to 1,003,131. Heading H1K. In a method of making a semi-conductor device from a body of semi-conductor material comprising first and second layers of opposite conductivity type, the first layer including a main region 104 bordered by an inversion region 106 formed by undesired conversion of some of the second layer 101 to the opposite conductivity type, a conductivity-determining impurity is diffused into selected parts of the inversion region so that these parts 105 are converted to the same conductivity type as the second layer 101 and a unitary mass of the same conductivity type is formed, including the converted parts 105 and at least some of the material from the original second layer 101. The same impurity may be simultaneously diffused into a sub-region 102 of the main region 104 of the first layer, forming a transistor body. Diffusion takes place through apertures in an oxide film 107 which is finally re-grown and covered by a glass layer 108.
GB3499364A 1963-08-27 1964-08-26 Fabrication of semiconductor devices Expired GB1011504A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US30482963A 1963-08-27 1963-08-27

Publications (1)

Publication Number Publication Date
GB1011504A true GB1011504A (en) 1965-12-01

Family

ID=23178196

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3499364A Expired GB1011504A (en) 1963-08-27 1964-08-26 Fabrication of semiconductor devices

Country Status (1)

Country Link
GB (1) GB1011504A (en)

Similar Documents

Publication Publication Date Title
GB1375355A (en)
GB1026019A (en) Improvements in or relating to semiconductor devices
GB1313829A (en) Transistors and aproduction thereof
GB1012124A (en) Improvements in or relating to semiconductor devices
GB1003131A (en) Semiconductor devices and their fabrication
GB1148417A (en) Integrated circuit structures including controlled rectifiers or their structural equivalents and method of making the same
GB1243355A (en) Improvements in and relating to semiconductor devices
GB1109371A (en) Metal-oxide-semiconductor field effect transistor
ES329618A1 (en) A method of manufacturing a transistor. (Machine-translation by Google Translate, not legally binding)
GB1194113A (en) A Method of Manufacturing Transistors
GB1452882A (en) Zener diode for integrated circuits
ES402164A1 (en) Monolithic semiconductor device
ES486588A1 (en) Double diffused transistor structure and method of making same.
GB1011504A (en) Fabrication of semiconductor devices
GB1106787A (en) Improvements in semiconductor devices
GB1098760A (en) Method of making semiconductor device
GB1086856A (en) Improvements in or relating to methods of manufacturing semi-conductor devices
GB1287247A (en) Improved semiconductor device with high junction breakdown voltage and method of manufacture
GB1228238A (en)
US3919006A (en) Method of manufacturing a lateral transistor
GB1127161A (en) Improvements in or relating to diffused base transistors
GB1074816A (en) Improvements relating to semi-conductor devices
GB1260567A (en) Improvements in or relating to semiconductor devices
GB1099049A (en) A method of manufacturing transistors
GB1078273A (en) Semiconductor device