ES402164A1 - Monolithic semiconductor device - Google Patents

Monolithic semiconductor device

Info

Publication number
ES402164A1
ES402164A1 ES402164A ES402164A ES402164A1 ES 402164 A1 ES402164 A1 ES 402164A1 ES 402164 A ES402164 A ES 402164A ES 402164 A ES402164 A ES 402164A ES 402164 A1 ES402164 A1 ES 402164A1
Authority
ES
Spain
Prior art keywords
substrate
epitaxic
layer
epitaxic layer
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES402164A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of ES402164A1 publication Critical patent/ES402164A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)

Abstract

A method of manufacturing monolithic semiconductor devices, comprising the steps of: arranging a semiconductor substrate of a certain type of conductivity; introducing into said substrate, through some desired surface places, two impurities of different diffusion rates and of the other type of conductivity; on said substrate, forming an epitaxic layer of semiconductor material of the same type of conductivity as said substrate; subjecting said epitaxic layer and said substrate to a treatment whereby one of said impurities diffuses out completely through said epitaxic layer until reaching the surface of said epitaxic layer opposite to the interface between said epitaxic layer and said substrate; forming at one of said desired surface locations a bipolar transistor, fully comprised within the ruler of said epitaxic layer through which the first of said impurities has completely diffused outward, through said epitaxic layer, until reaching said surface of said epitaxic layer opposite to said interfacial zone; and forming a field effect transistor in said epitaxic layer, outside or outside of said region. (Machine-translation by Google Translate, not legally binding)
ES402164A 1971-04-28 1972-04-27 Monolithic semiconductor device Expired ES402164A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13816171A 1971-04-28 1971-04-28

Publications (1)

Publication Number Publication Date
ES402164A1 true ES402164A1 (en) 1975-03-01

Family

ID=22480723

Family Applications (2)

Application Number Title Priority Date Filing Date
ES402164A Expired ES402164A1 (en) 1971-04-28 1972-04-27 Monolithic semiconductor device
ES402165A Expired ES402165A1 (en) 1971-04-28 1972-04-27 Monolithic semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES402165A Expired ES402165A1 (en) 1971-04-28 1972-04-27 Monolithic semiconductor device

Country Status (12)

Country Link
JP (1) JPS5037507B1 (en)
AU (1) AU459156B2 (en)
CA (1) CA966231A (en)
CH (1) CH536029A (en)
DE (1) DE2219696C3 (en)
ES (2) ES402164A1 (en)
FR (1) FR2134360B1 (en)
GB (1) GB1358612A (en)
IT (1) IT947674B (en)
NL (1) NL7204804A (en)
SE (1) SE384949B (en)
ZA (1) ZA721782B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2608267A1 (en) * 1976-02-28 1977-09-08 Itt Ind Gmbh Deutsche METHOD OF MANUFACTURING A MONOLITHIC INTEGRATED CIRCUIT
JPS5851561A (en) * 1981-09-24 1983-03-26 Hitachi Ltd Semiconductor integrated circuit device
JPS58225663A (en) * 1982-06-23 1983-12-27 Toshiba Corp Manufacture of semiconductor device
JPS5955052A (en) * 1982-09-24 1984-03-29 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPS59177960A (en) * 1983-03-28 1984-10-08 Hitachi Ltd Semiconductor device and manufacture thereof
IT1214808B (en) * 1984-12-20 1990-01-18 Ates Componenti Elettron TICO AND SEMICONDUCTOR PROCESS FOR THE FORMATION OF A BURIED LAYER AND OF A COLLECTOR REGION IN A MONOLI DEVICE
US4727046A (en) * 1986-07-16 1988-02-23 Fairchild Semiconductor Corporation Method of fabricating high performance BiCMOS structures having poly emitters and silicided bases
KR890004420B1 (en) * 1986-11-04 1989-11-03 삼성반도체통신 주식회사 Manufacturing method of bicmos device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3293087A (en) * 1963-03-05 1966-12-20 Fairchild Camera Instr Co Method of making isolated epitaxial field-effect device
US3481801A (en) * 1966-10-10 1969-12-02 Frances Hugle Isolation technique for integrated circuits
US3479233A (en) * 1967-01-16 1969-11-18 Ibm Method for simultaneously forming a buried layer and surface connection in semiconductor devices
US3440503A (en) * 1967-05-31 1969-04-22 Westinghouse Electric Corp Integrated complementary mos-type transistor structure and method of making same
GB1280022A (en) * 1968-08-30 1972-07-05 Mullard Ltd Improvements in and relating to semiconductor devices

Also Published As

Publication number Publication date
IT947674B (en) 1973-05-30
AU459156B2 (en) 1975-03-20
JPS5037507B1 (en) 1975-12-03
CA966231A (en) 1975-04-15
DE2219696C3 (en) 1982-02-18
FR2134360B1 (en) 1974-06-28
AU4164272A (en) 1973-12-20
DE2219696B2 (en) 1978-04-06
GB1358612A (en) 1974-07-03
ZA721782B (en) 1973-10-31
NL7204804A (en) 1972-10-31
SE384949B (en) 1976-05-24
FR2134360A1 (en) 1972-12-08
DE2219696A1 (en) 1972-11-16
CH536029A (en) 1973-04-15
ES402165A1 (en) 1975-03-16

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