Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co LtdfiledCriticalNEC Corp
Priority to JP9910176ApriorityCriticalpatent/JPS5324278A/en
Publication of JPS5324278ApublicationCriticalpatent/JPS5324278A/en
PURPOSE: To form the emitter layer of bipolar transistors in particular shallow by forming impurity diffused layers thereafter holding said layers at a temperature lower by 50 to 200°A than the diffusion temperature.
COPYRIGHT: (C)1978,JPO&Japio
JP9910176A1976-08-181976-08-18Production of semiconductor device
PendingJPS5324278A
(en)