JPS5254383A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5254383A
JPS5254383A JP13023675A JP13023675A JPS5254383A JP S5254383 A JPS5254383 A JP S5254383A JP 13023675 A JP13023675 A JP 13023675A JP 13023675 A JP13023675 A JP 13023675A JP S5254383 A JPS5254383 A JP S5254383A
Authority
JP
Japan
Prior art keywords
conduction type
epitaxial layer
production
semiconductor device
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13023675A
Other languages
Japanese (ja)
Other versions
JPS588591B2 (en
Inventor
Kaoru Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13023675A priority Critical patent/JPS588591B2/en
Publication of JPS5254383A publication Critical patent/JPS5254383A/en
Publication of JPS588591B2 publication Critical patent/JPS588591B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To form a high impurity concentration junction by forming a first conduction type base layer through diffusion of an impurity from the surface of a first epitaxial layer formed on a semiconductor surface, burying said first conduction type base layer by overlapping with a second epitaxial layer, thence forming a second conduction type emitter region through diffusion of the impurity from the surface of said second epitaxial layer.
COPYRIGHT: (C)1977,JPO&Japio
JP13023675A 1975-10-29 1975-10-29 hand tai souchi seizou houhou Expired JPS588591B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13023675A JPS588591B2 (en) 1975-10-29 1975-10-29 hand tai souchi seizou houhou

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13023675A JPS588591B2 (en) 1975-10-29 1975-10-29 hand tai souchi seizou houhou

Publications (2)

Publication Number Publication Date
JPS5254383A true JPS5254383A (en) 1977-05-02
JPS588591B2 JPS588591B2 (en) 1983-02-16

Family

ID=15029358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13023675A Expired JPS588591B2 (en) 1975-10-29 1975-10-29 hand tai souchi seizou houhou

Country Status (1)

Country Link
JP (1) JPS588591B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5688702A (en) * 1988-02-08 1997-11-18 Kabushiki Kaisha Toshiba Process of making a semiconductor device using a silicon-on-insulator substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5688702A (en) * 1988-02-08 1997-11-18 Kabushiki Kaisha Toshiba Process of making a semiconductor device using a silicon-on-insulator substrate

Also Published As

Publication number Publication date
JPS588591B2 (en) 1983-02-16

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