JPS5254383A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5254383A JPS5254383A JP13023675A JP13023675A JPS5254383A JP S5254383 A JPS5254383 A JP S5254383A JP 13023675 A JP13023675 A JP 13023675A JP 13023675 A JP13023675 A JP 13023675A JP S5254383 A JPS5254383 A JP S5254383A
- Authority
- JP
- Japan
- Prior art keywords
- conduction type
- epitaxial layer
- production
- semiconductor device
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To form a high impurity concentration junction by forming a first conduction type base layer through diffusion of an impurity from the surface of a first epitaxial layer formed on a semiconductor surface, burying said first conduction type base layer by overlapping with a second epitaxial layer, thence forming a second conduction type emitter region through diffusion of the impurity from the surface of said second epitaxial layer.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13023675A JPS588591B2 (en) | 1975-10-29 | 1975-10-29 | hand tai souchi seizou houhou |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13023675A JPS588591B2 (en) | 1975-10-29 | 1975-10-29 | hand tai souchi seizou houhou |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5254383A true JPS5254383A (en) | 1977-05-02 |
JPS588591B2 JPS588591B2 (en) | 1983-02-16 |
Family
ID=15029358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13023675A Expired JPS588591B2 (en) | 1975-10-29 | 1975-10-29 | hand tai souchi seizou houhou |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS588591B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5688702A (en) * | 1988-02-08 | 1997-11-18 | Kabushiki Kaisha Toshiba | Process of making a semiconductor device using a silicon-on-insulator substrate |
-
1975
- 1975-10-29 JP JP13023675A patent/JPS588591B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5688702A (en) * | 1988-02-08 | 1997-11-18 | Kabushiki Kaisha Toshiba | Process of making a semiconductor device using a silicon-on-insulator substrate |
Also Published As
Publication number | Publication date |
---|---|
JPS588591B2 (en) | 1983-02-16 |
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