Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Hitachi Ltd
Original Assignee
Hitachi Ltd
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Publication date
Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP13530276ApriorityCriticalpatent/JPS5360583A/en
Publication of JPS5360583ApublicationCriticalpatent/JPS5360583A/en
PURPOSE: To improve hFE by diffusion forming a P type base region and an N type emitter region on an N type semiconductor substrate, thereafter diffusing Ga thinnly over the entire surface, removing the portions other than the base region and leaving P+ type layer only on the base region surface.
COPYRIGHT: (C)1978,JPO&Japio
JP13530276A1976-11-121976-11-12Production of semiconductor device
PendingJPS5360583A
(en)