JPS5396766A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5396766A
JPS5396766A JP1196577A JP1196577A JPS5396766A JP S5396766 A JPS5396766 A JP S5396766A JP 1196577 A JP1196577 A JP 1196577A JP 1196577 A JP1196577 A JP 1196577A JP S5396766 A JPS5396766 A JP S5396766A
Authority
JP
Japan
Prior art keywords
semiconductor device
buried layer
layer
forming
collector electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1196577A
Other languages
Japanese (ja)
Inventor
Teruo Iino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1196577A priority Critical patent/JPS5396766A/en
Publication of JPS5396766A publication Critical patent/JPS5396766A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To considerably reduce resistances between buried layer collector electrodes by forming a metal layer from an island form epitaxial layer surface down to an n type buried layer without contacting base and emitter layers.
COPYRIGHT: (C)1978,JPO&Japio
JP1196577A 1977-02-04 1977-02-04 Semiconductor device Pending JPS5396766A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1196577A JPS5396766A (en) 1977-02-04 1977-02-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1196577A JPS5396766A (en) 1977-02-04 1977-02-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5396766A true JPS5396766A (en) 1978-08-24

Family

ID=11792321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1196577A Pending JPS5396766A (en) 1977-02-04 1977-02-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5396766A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113267A (en) * 1980-11-19 1982-07-14 Ibm Method of producing semiconductor device
JPS57176742A (en) * 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPS63204649A (en) * 1987-02-19 1988-08-24 Nec Corp Semiconductor device
JPH02152241A (en) * 1988-12-02 1990-06-12 Nec Corp Integrated circuit device
JPH0369124A (en) * 1989-08-08 1991-03-25 Nec Corp Semiconductor integrated circuit
JPH06101470B2 (en) * 1984-02-03 1994-12-12 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド Integrated circuit device with active elements consisting of bipolar transistors formed in slots
JP2007501511A (en) * 2003-08-02 2007-01-25 ゼテックス・ピーエルシー Low saturation voltage bipolar transistor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113267A (en) * 1980-11-19 1982-07-14 Ibm Method of producing semiconductor device
JPH0235468B2 (en) * 1980-11-19 1990-08-10 Intaanashonaru Bijinesu Mashiinzu Corp
JPS57176742A (en) * 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPS6322463B2 (en) * 1981-04-21 1988-05-12 Nippon Telegraph & Telephone
JPH06101470B2 (en) * 1984-02-03 1994-12-12 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド Integrated circuit device with active elements consisting of bipolar transistors formed in slots
JPS63204649A (en) * 1987-02-19 1988-08-24 Nec Corp Semiconductor device
JPH02152241A (en) * 1988-12-02 1990-06-12 Nec Corp Integrated circuit device
JPH0369124A (en) * 1989-08-08 1991-03-25 Nec Corp Semiconductor integrated circuit
JP2007501511A (en) * 2003-08-02 2007-01-25 ゼテックス・ピーエルシー Low saturation voltage bipolar transistor

Similar Documents

Publication Publication Date Title
JPS5215262A (en) Semiconductor device and its manufacturing method
JPS528785A (en) Semiconductor device electrode structure
JPS5396766A (en) Semiconductor device
JPS5386516A (en) Solid state pickup device
JPS534469A (en) Semiconductor device
JPS5380183A (en) Semiconductor device
JPS5422171A (en) Manufacture of semiconductor device
JPS53123673A (en) Manufacture of semiconductor device
JPS52108775A (en) Semiconductor device
JPS5376763A (en) Semiconductor rectifying device
JPS53107280A (en) Semiconductor device
JPS53141574A (en) Manufacture of semiconductor device
JPS5353254A (en) Semiconductor device
JPS53139476A (en) Manufacture of semiconductor device
JPS51123071A (en) Fabrication technique of semiconductor device
JPS5317286A (en) Production of semiconductor device
JPS5362984A (en) Production of semiconductor device
JPS5380184A (en) Manufacture of semiconductor device
JPS5550656A (en) Semiconductor device
JPS53125774A (en) Bipolar transistor and its manufacture
JPS538058A (en) Production of semiconductor device
JPS53116073A (en) Semiconductor device
JPS52141566A (en) Semiconductor device and its manufacture
JPS5365074A (en) Semiconductor device
JPS5360583A (en) Production of semiconductor device