JPS57176742A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57176742A
JPS57176742A JP6106981A JP6106981A JPS57176742A JP S57176742 A JPS57176742 A JP S57176742A JP 6106981 A JP6106981 A JP 6106981A JP 6106981 A JP6106981 A JP 6106981A JP S57176742 A JPS57176742 A JP S57176742A
Authority
JP
Japan
Prior art keywords
photoresist
silicon
stepwise
accumulated
plasma deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6106981A
Other languages
Japanese (ja)
Other versions
JPS6322463B2 (en
Inventor
Manabu Henmi
Kohei Ebara
Susumu Muramoto
Seitaro Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6106981A priority Critical patent/JPS57176742A/en
Priority to US06/369,235 priority patent/US4564997A/en
Priority to CA000401294A priority patent/CA1204883A/en
Priority to EP82302044A priority patent/EP0063917B1/en
Priority to DE8282302044T priority patent/DE3271995D1/en
Publication of JPS57176742A publication Critical patent/JPS57176742A/en
Publication of JPS6322463B2 publication Critical patent/JPS6322463B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To obtain an interelement isolating structure adapted for a microminiaturization and having no surface stepwise difference by utilizing the accumulation of a silicon oxidized film by plasma deposition. CONSTITUTION:A photoresist 10 formed in a pattern is formed on a silicon substrate 1, with the photoresist as a mask it is dry etched to form an etching groove 12. Then, a silicon oxidized film 13 is accumulated by an ECR plasma deposition, and the groove 12 is buried. Subsequently, the photoresist 10 is exfoliated. Thus, a stepwise structure having a cut and erected wall of a semiconductor substrate and an interelement isolating structure having an accumulated insulating layer contacted with the wall of the stepwise structure can be obtained. According to this technique, a plurality of types of silicon oxidized films of different widths can be formed in the same substrate.
JP6106981A 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof Granted JPS57176742A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP6106981A JPS57176742A (en) 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof
US06/369,235 US4564997A (en) 1981-04-21 1982-04-16 Semiconductor device and manufacturing process thereof
CA000401294A CA1204883A (en) 1981-04-21 1982-04-20 Semiconductor device and manufacturing process thereof
EP82302044A EP0063917B1 (en) 1981-04-21 1982-04-21 Method of manufacturing a semiconductor device
DE8282302044T DE3271995D1 (en) 1981-04-21 1982-04-21 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6106981A JPS57176742A (en) 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57176742A true JPS57176742A (en) 1982-10-30
JPS6322463B2 JPS6322463B2 (en) 1988-05-12

Family

ID=13160481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6106981A Granted JPS57176742A (en) 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57176742A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123266A (en) * 1982-12-28 1984-07-17 Toshiba Corp Metal insulator semiconductor transistor and manufacture thereof
JPS59178773A (en) * 1983-03-30 1984-10-11 Toshiba Corp Manufacture of semiconductor device
JPS6161466A (en) * 1984-09-03 1986-03-29 Fujitsu Ltd Manufacture of semiconductor device
JPS6184866A (en) * 1984-10-02 1986-04-30 Nec Corp Semiconductor ic device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396766A (en) * 1977-02-04 1978-08-24 Nec Corp Semiconductor device
JPS54591A (en) * 1977-06-03 1979-01-05 Hitachi Ltd Element isolating method
JPS55130140A (en) * 1979-03-30 1980-10-08 Toshiba Corp Fabricating method of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396766A (en) * 1977-02-04 1978-08-24 Nec Corp Semiconductor device
JPS54591A (en) * 1977-06-03 1979-01-05 Hitachi Ltd Element isolating method
JPS55130140A (en) * 1979-03-30 1980-10-08 Toshiba Corp Fabricating method of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123266A (en) * 1982-12-28 1984-07-17 Toshiba Corp Metal insulator semiconductor transistor and manufacture thereof
JPS59178773A (en) * 1983-03-30 1984-10-11 Toshiba Corp Manufacture of semiconductor device
JPS6161466A (en) * 1984-09-03 1986-03-29 Fujitsu Ltd Manufacture of semiconductor device
JPS6184866A (en) * 1984-10-02 1986-04-30 Nec Corp Semiconductor ic device

Also Published As

Publication number Publication date
JPS6322463B2 (en) 1988-05-12

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