JPS54107277A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS54107277A
JPS54107277A JP1342378A JP1342378A JPS54107277A JP S54107277 A JPS54107277 A JP S54107277A JP 1342378 A JP1342378 A JP 1342378A JP 1342378 A JP1342378 A JP 1342378A JP S54107277 A JPS54107277 A JP S54107277A
Authority
JP
Japan
Prior art keywords
metallic layer
layer
photo resistor
mask
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1342378A
Other languages
Japanese (ja)
Other versions
JPS6020901B2 (en
Inventor
Hisao Yamaguchi
Koichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1342378A priority Critical patent/JPS6020901B2/en
Publication of JPS54107277A publication Critical patent/JPS54107277A/en
Publication of JPS6020901B2 publication Critical patent/JPS6020901B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To form a matallic layer into a desired pattern with a high precision by preventing the metallic layer in the part masked with a photo resistor film from being etched when the photo resistor firm is used as a mask to etch selectively the metallic layer formed on the semiconductor substrate.
CONSTITUTION: The first insulating layer 2, poly-Si wiring layer 3, the second insulating layer 4, and Al metallic layer 6 including 1.0% of Si are formed on Si substrate 1. Constricted parts are formed in insulating layer 4 and metallic layer 6. Next, they are put in a plasma unit and are subjected to plasma processing of the metallic layer surface; and after photo resistor materials are caused to adhere to the surface, photo resistor film 18 is formed by drying and etching. Then, this mask is used as a mask to etch the metallic layer, thereby forming a metallic layer having a desired pattern.
COPYRIGHT: (C)1979,JPO&Japio
JP1342378A 1978-02-10 1978-02-10 Manufacturing method of semiconductor device Expired JPS6020901B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1342378A JPS6020901B2 (en) 1978-02-10 1978-02-10 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1342378A JPS6020901B2 (en) 1978-02-10 1978-02-10 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS54107277A true JPS54107277A (en) 1979-08-22
JPS6020901B2 JPS6020901B2 (en) 1985-05-24

Family

ID=11832715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1342378A Expired JPS6020901B2 (en) 1978-02-10 1978-02-10 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6020901B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792833A (en) * 1980-12-01 1982-06-09 Toshiba Corp Manufacture of semiconductor device
JPS6112045A (en) * 1984-06-28 1986-01-20 Oki Electric Ind Co Ltd Formation of bump electrode

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63195001A (en) * 1987-02-09 1988-08-12 Takaaki Aoki Adjustment bush builtup body for wheel installing and wheel installation using the body

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792833A (en) * 1980-12-01 1982-06-09 Toshiba Corp Manufacture of semiconductor device
JPS6112045A (en) * 1984-06-28 1986-01-20 Oki Electric Ind Co Ltd Formation of bump electrode

Also Published As

Publication number Publication date
JPS6020901B2 (en) 1985-05-24

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