Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP1168576ApriorityCriticalpatent/JPS5294785A/en
Publication of JPS5294785ApublicationCriticalpatent/JPS5294785A/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Weting
(AREA)
Abstract
PURPOSE: In order to open the hole on the surface of semiconductor element for formation of conductive thin film, ion is injected into the surface layer, forming destruction layer. After this, etching is carried out using anti-etching resist for the mask. As a result, the open hole is s haped into a cone, avoiding the stage breakeage for wiring.
COPYRIGHT: (C)1977,JPO&Japio
JP1168576A1976-02-051976-02-05Manufacture of semiconductor device
PendingJPS5294785A
(en)