JPS5265672A - Formation of grrove in semiconductor wafer - Google Patents

Formation of grrove in semiconductor wafer

Info

Publication number
JPS5265672A
JPS5265672A JP14165875A JP14165875A JPS5265672A JP S5265672 A JPS5265672 A JP S5265672A JP 14165875 A JP14165875 A JP 14165875A JP 14165875 A JP14165875 A JP 14165875A JP S5265672 A JPS5265672 A JP S5265672A
Authority
JP
Japan
Prior art keywords
grrove
formation
semiconductor wafer
grooves
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14165875A
Other languages
Japanese (ja)
Inventor
Kohei Yamada
Koichiro Yamada
Katsuo Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14165875A priority Critical patent/JPS5265672A/en
Publication of JPS5265672A publication Critical patent/JPS5265672A/en
Pending legal-status Critical Current

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  • Weting (AREA)

Abstract

PURPOSE: Defective resist film and step cutting of wiring layer are prevented by forming a porous layer at the portion on a wafer where grooves are to be made and formin the grooves having mild shoulder portions through the sue of a difference in the rate of etching.
COPYRIGHT: (C)1977,JPO&Japio
JP14165875A 1975-11-28 1975-11-28 Formation of grrove in semiconductor wafer Pending JPS5265672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14165875A JPS5265672A (en) 1975-11-28 1975-11-28 Formation of grrove in semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14165875A JPS5265672A (en) 1975-11-28 1975-11-28 Formation of grrove in semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5265672A true JPS5265672A (en) 1977-05-31

Family

ID=15297152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14165875A Pending JPS5265672A (en) 1975-11-28 1975-11-28 Formation of grrove in semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5265672A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63310122A (en) * 1987-05-27 1988-12-19 シーメンス、アクチエンゲゼルシヤフト Method of forming hole or trench in n-type doped silicon layer or substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63310122A (en) * 1987-05-27 1988-12-19 シーメンス、アクチエンゲゼルシヤフト Method of forming hole or trench in n-type doped silicon layer or substrate

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