JPS5265672A - Formation of grrove in semiconductor wafer - Google Patents
Formation of grrove in semiconductor waferInfo
- Publication number
- JPS5265672A JPS5265672A JP14165875A JP14165875A JPS5265672A JP S5265672 A JPS5265672 A JP S5265672A JP 14165875 A JP14165875 A JP 14165875A JP 14165875 A JP14165875 A JP 14165875A JP S5265672 A JPS5265672 A JP S5265672A
- Authority
- JP
- Japan
- Prior art keywords
- grrove
- formation
- semiconductor wafer
- grooves
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE: Defective resist film and step cutting of wiring layer are prevented by forming a porous layer at the portion on a wafer where grooves are to be made and formin the grooves having mild shoulder portions through the sue of a difference in the rate of etching.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14165875A JPS5265672A (en) | 1975-11-28 | 1975-11-28 | Formation of grrove in semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14165875A JPS5265672A (en) | 1975-11-28 | 1975-11-28 | Formation of grrove in semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5265672A true JPS5265672A (en) | 1977-05-31 |
Family
ID=15297152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14165875A Pending JPS5265672A (en) | 1975-11-28 | 1975-11-28 | Formation of grrove in semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5265672A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63310122A (en) * | 1987-05-27 | 1988-12-19 | シーメンス、アクチエンゲゼルシヤフト | Method of forming hole or trench in n-type doped silicon layer or substrate |
-
1975
- 1975-11-28 JP JP14165875A patent/JPS5265672A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63310122A (en) * | 1987-05-27 | 1988-12-19 | シーメンス、アクチエンゲゼルシヤフト | Method of forming hole or trench in n-type doped silicon layer or substrate |
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