JPS5210070A - Method for manufacturing silicon semiconductor device - Google Patents

Method for manufacturing silicon semiconductor device

Info

Publication number
JPS5210070A
JPS5210070A JP8605675A JP8605675A JPS5210070A JP S5210070 A JPS5210070 A JP S5210070A JP 8605675 A JP8605675 A JP 8605675A JP 8605675 A JP8605675 A JP 8605675A JP S5210070 A JPS5210070 A JP S5210070A
Authority
JP
Japan
Prior art keywords
semiconductor device
silicon semiconductor
manufacturing silicon
decreasing
substrate surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8605675A
Other languages
Japanese (ja)
Other versions
JPS5744028B2 (en
Inventor
Yaichiro Watakabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8605675A priority Critical patent/JPS5210070A/en
Publication of JPS5210070A publication Critical patent/JPS5210070A/en
Publication of JPS5744028B2 publication Critical patent/JPS5744028B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To prevent decreasing of dielectric strength of an element and prevent increasing of substrate surface density caused by formation of a glass film by means of injection of ions into the substrate surface for the purpose of decreasing the surface density.
COPYRIGHT: (C)1977,JPO&Japio
JP8605675A 1975-07-14 1975-07-14 Method for manufacturing silicon semiconductor device Granted JPS5210070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8605675A JPS5210070A (en) 1975-07-14 1975-07-14 Method for manufacturing silicon semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8605675A JPS5210070A (en) 1975-07-14 1975-07-14 Method for manufacturing silicon semiconductor device

Publications (2)

Publication Number Publication Date
JPS5210070A true JPS5210070A (en) 1977-01-26
JPS5744028B2 JPS5744028B2 (en) 1982-09-18

Family

ID=13876022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8605675A Granted JPS5210070A (en) 1975-07-14 1975-07-14 Method for manufacturing silicon semiconductor device

Country Status (1)

Country Link
JP (1) JPS5210070A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017009760A1 (en) 2016-10-21 2018-04-26 Fanuc Corporation Numerical control device and control method for a numerical control device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017009760A1 (en) 2016-10-21 2018-04-26 Fanuc Corporation Numerical control device and control method for a numerical control device
DE102017009760B4 (en) 2016-10-21 2020-01-02 Fanuc Corporation Numerical control device and control method for a numerical control device

Also Published As

Publication number Publication date
JPS5744028B2 (en) 1982-09-18

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