JPS5230185A - Process for producing semiconductor device - Google Patents

Process for producing semiconductor device

Info

Publication number
JPS5230185A
JPS5230185A JP10591675A JP10591675A JPS5230185A JP S5230185 A JPS5230185 A JP S5230185A JP 10591675 A JP10591675 A JP 10591675A JP 10591675 A JP10591675 A JP 10591675A JP S5230185 A JPS5230185 A JP S5230185A
Authority
JP
Japan
Prior art keywords
semiconductor device
producing semiconductor
parasitics
minimized
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10591675A
Other languages
Japanese (ja)
Inventor
Toru Inaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10591675A priority Critical patent/JPS5230185A/en
Publication of JPS5230185A publication Critical patent/JPS5230185A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To provide a semiconductor integrated circuit device having a high pressure resistance, wherein the isolation zone and parasitics effects are minimized by forming the insulation layer through ion implanting method and by using the anisotropic etching.
COPYRIGHT: (C)1977,JPO&Japio
JP10591675A 1975-09-03 1975-09-03 Process for producing semiconductor device Pending JPS5230185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10591675A JPS5230185A (en) 1975-09-03 1975-09-03 Process for producing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10591675A JPS5230185A (en) 1975-09-03 1975-09-03 Process for producing semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP3072383A Division JPS58155739A (en) 1983-02-28 1983-02-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5230185A true JPS5230185A (en) 1977-03-07

Family

ID=14420175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10591675A Pending JPS5230185A (en) 1975-09-03 1975-09-03 Process for producing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5230185A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4489021A (en) * 1981-09-03 1984-12-18 Taurus Gumiipari Vallalat Process for manufacturing large-length and large-diameter hoses
US4982269A (en) * 1988-05-10 1991-01-01 Thomson Hybrides Et Microondes Blanar-type microwave integrated circuit with at least one mesa component, method of fabrication thereof
US4997786A (en) * 1986-06-13 1991-03-05 Matsushita Electric Industrial Co., Ltd. Method of fabricating a semiconductor device having buried insulation layer separated by ditches
US5049521A (en) * 1989-11-30 1991-09-17 Silicon General, Inc. Method for forming dielectrically isolated semiconductor devices with contact to the wafer substrate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4489021A (en) * 1981-09-03 1984-12-18 Taurus Gumiipari Vallalat Process for manufacturing large-length and large-diameter hoses
US4997786A (en) * 1986-06-13 1991-03-05 Matsushita Electric Industrial Co., Ltd. Method of fabricating a semiconductor device having buried insulation layer separated by ditches
US4982269A (en) * 1988-05-10 1991-01-01 Thomson Hybrides Et Microondes Blanar-type microwave integrated circuit with at least one mesa component, method of fabrication thereof
US5102822A (en) * 1988-05-10 1992-04-07 Thomson Hybrides Et Microondes Planar-type microwave integrated circuit with at least one mesa component, method of fabrication thereof
US5049521A (en) * 1989-11-30 1991-09-17 Silicon General, Inc. Method for forming dielectrically isolated semiconductor devices with contact to the wafer substrate

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