JPS5230185A - Process for producing semiconductor device - Google Patents
Process for producing semiconductor deviceInfo
- Publication number
- JPS5230185A JPS5230185A JP10591675A JP10591675A JPS5230185A JP S5230185 A JPS5230185 A JP S5230185A JP 10591675 A JP10591675 A JP 10591675A JP 10591675 A JP10591675 A JP 10591675A JP S5230185 A JPS5230185 A JP S5230185A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- producing semiconductor
- parasitics
- minimized
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To provide a semiconductor integrated circuit device having a high pressure resistance, wherein the isolation zone and parasitics effects are minimized by forming the insulation layer through ion implanting method and by using the anisotropic etching.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10591675A JPS5230185A (en) | 1975-09-03 | 1975-09-03 | Process for producing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10591675A JPS5230185A (en) | 1975-09-03 | 1975-09-03 | Process for producing semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3072383A Division JPS58155739A (en) | 1983-02-28 | 1983-02-28 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5230185A true JPS5230185A (en) | 1977-03-07 |
Family
ID=14420175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10591675A Pending JPS5230185A (en) | 1975-09-03 | 1975-09-03 | Process for producing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5230185A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4489021A (en) * | 1981-09-03 | 1984-12-18 | Taurus Gumiipari Vallalat | Process for manufacturing large-length and large-diameter hoses |
US4982269A (en) * | 1988-05-10 | 1991-01-01 | Thomson Hybrides Et Microondes | Blanar-type microwave integrated circuit with at least one mesa component, method of fabrication thereof |
US4997786A (en) * | 1986-06-13 | 1991-03-05 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a semiconductor device having buried insulation layer separated by ditches |
US5049521A (en) * | 1989-11-30 | 1991-09-17 | Silicon General, Inc. | Method for forming dielectrically isolated semiconductor devices with contact to the wafer substrate |
-
1975
- 1975-09-03 JP JP10591675A patent/JPS5230185A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4489021A (en) * | 1981-09-03 | 1984-12-18 | Taurus Gumiipari Vallalat | Process for manufacturing large-length and large-diameter hoses |
US4997786A (en) * | 1986-06-13 | 1991-03-05 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a semiconductor device having buried insulation layer separated by ditches |
US4982269A (en) * | 1988-05-10 | 1991-01-01 | Thomson Hybrides Et Microondes | Blanar-type microwave integrated circuit with at least one mesa component, method of fabrication thereof |
US5102822A (en) * | 1988-05-10 | 1992-04-07 | Thomson Hybrides Et Microondes | Planar-type microwave integrated circuit with at least one mesa component, method of fabrication thereof |
US5049521A (en) * | 1989-11-30 | 1991-09-17 | Silicon General, Inc. | Method for forming dielectrically isolated semiconductor devices with contact to the wafer substrate |
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