JPS5249772A - Process for production of semiconductor device - Google Patents

Process for production of semiconductor device

Info

Publication number
JPS5249772A
JPS5249772A JP12575275A JP12575275A JPS5249772A JP S5249772 A JPS5249772 A JP S5249772A JP 12575275 A JP12575275 A JP 12575275A JP 12575275 A JP12575275 A JP 12575275A JP S5249772 A JPS5249772 A JP S5249772A
Authority
JP
Japan
Prior art keywords
semiconductor device
production
sputteretching
amke
serration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12575275A
Other languages
Japanese (ja)
Inventor
Yoshio Honma
Tadao Kachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12575275A priority Critical patent/JPS5249772A/en
Priority to DE2547792A priority patent/DE2547792C3/en
Priority to NL7512562.A priority patent/NL165002C/en
Priority to US05/626,277 priority patent/US4025411A/en
Publication of JPS5249772A publication Critical patent/JPS5249772A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To form a serration-free surface and amke a semiconductor device of high scale of integration, by coating the undulated surface of an Si substrate with a predetermined coating layer and subjecting same to sputteretching.
COPYRIGHT: (C)1977,JPO&Japio
JP12575275A 1974-10-25 1975-10-18 Process for production of semiconductor device Pending JPS5249772A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP12575275A JPS5249772A (en) 1975-10-18 1975-10-18 Process for production of semiconductor device
DE2547792A DE2547792C3 (en) 1974-10-25 1975-10-24 Method for manufacturing a semiconductor component
NL7512562.A NL165002C (en) 1974-10-25 1975-10-27 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE REMOVING IMPERIALS FROM THE SURFACE OF A SUBSTRATE
US05/626,277 US4025411A (en) 1974-10-25 1975-10-28 Fabricating semiconductor device utilizing a physical ion etching process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12575275A JPS5249772A (en) 1975-10-18 1975-10-18 Process for production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5249772A true JPS5249772A (en) 1977-04-21

Family

ID=14917922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12575275A Pending JPS5249772A (en) 1974-10-25 1975-10-18 Process for production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5249772A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5425178A (en) * 1977-07-27 1979-02-24 Fujitsu Ltd Manufacture for semiconductor device
JPS5673435A (en) * 1979-11-20 1981-06-18 Nec Corp Manufacture of semiconductor device
JPS57170551A (en) * 1981-04-14 1982-10-20 Fujitsu Ltd Manufacture of semiconductor device
JPS589338A (en) * 1981-06-30 1983-01-19 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン Method of removing residue
JPS5893270A (en) * 1981-11-30 1983-06-02 Toshiba Corp Manufacture of semiconductor device
JPS58182833A (en) * 1982-04-19 1983-10-25 ミテル・コ−ポレ−シヨン Method of flattening integrated circuit
JPS60161615A (en) * 1984-02-02 1985-08-23 Agency Of Ind Science & Technol Manufacture of soi film
JPS6427774A (en) * 1987-07-24 1989-01-30 Keiyo Blanking Kogyo Kk Nozzle unit for cutting groove
US5472916A (en) * 1993-04-05 1995-12-05 Siemens Aktiengesellschaft Method for manufacturing tunnel-effect sensors
US7828620B2 (en) 2003-01-09 2010-11-09 Sony Corporation Method of manufacturing tubular carbon molecule and tubular carbon molecule, method of manufacturing field electron emission device and field electron emission device, and method of manufacturing display unit and display unit

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5425178A (en) * 1977-07-27 1979-02-24 Fujitsu Ltd Manufacture for semiconductor device
JPS6325506B2 (en) * 1979-11-20 1988-05-25 Nippon Electric Co
JPS5673435A (en) * 1979-11-20 1981-06-18 Nec Corp Manufacture of semiconductor device
JPS57170551A (en) * 1981-04-14 1982-10-20 Fujitsu Ltd Manufacture of semiconductor device
JPS589338A (en) * 1981-06-30 1983-01-19 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン Method of removing residue
JPH0371781B2 (en) * 1981-06-30 1991-11-14 Intaanashonaru Bijinesu Mashiinzu Corp
JPH0346977B2 (en) * 1981-11-30 1991-07-17 Tokyo Shibaura Electric Co
JPS5893270A (en) * 1981-11-30 1983-06-02 Toshiba Corp Manufacture of semiconductor device
JPS58182833A (en) * 1982-04-19 1983-10-25 ミテル・コ−ポレ−シヨン Method of flattening integrated circuit
JPS60161615A (en) * 1984-02-02 1985-08-23 Agency Of Ind Science & Technol Manufacture of soi film
JPS6427774A (en) * 1987-07-24 1989-01-30 Keiyo Blanking Kogyo Kk Nozzle unit for cutting groove
US5472916A (en) * 1993-04-05 1995-12-05 Siemens Aktiengesellschaft Method for manufacturing tunnel-effect sensors
US7828620B2 (en) 2003-01-09 2010-11-09 Sony Corporation Method of manufacturing tubular carbon molecule and tubular carbon molecule, method of manufacturing field electron emission device and field electron emission device, and method of manufacturing display unit and display unit
US7892063B2 (en) 2003-01-09 2011-02-22 Sony Corporation Method of manufacturing tubular carbon molecule and tubular carbon molecule, method of manufacturing recording apparatus and recording apparatus, method of manufacturing field electron emission device and field electron emission device, and method of manufacturing display unit and display unit

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