JPS52154351A - Formation of electrode contact holes in semiconductor devices - Google Patents
Formation of electrode contact holes in semiconductor devicesInfo
- Publication number
- JPS52154351A JPS52154351A JP7108076A JP7108076A JPS52154351A JP S52154351 A JPS52154351 A JP S52154351A JP 7108076 A JP7108076 A JP 7108076A JP 7108076 A JP7108076 A JP 7108076A JP S52154351 A JPS52154351 A JP S52154351A
- Authority
- JP
- Japan
- Prior art keywords
- electrode contact
- contact holes
- formation
- semiconductor devices
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE: Electrode contact holes are formed highly accurately and finely by using dry etching, such as plasma etching, etc., which permits fine working of high accuracy at the time of forming through-holes in a silicon nitride film.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7108076A JPS52154351A (en) | 1976-06-18 | 1976-06-18 | Formation of electrode contact holes in semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7108076A JPS52154351A (en) | 1976-06-18 | 1976-06-18 | Formation of electrode contact holes in semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52154351A true JPS52154351A (en) | 1977-12-22 |
Family
ID=13450176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7108076A Pending JPS52154351A (en) | 1976-06-18 | 1976-06-18 | Formation of electrode contact holes in semiconductor devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52154351A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5831531A (en) * | 1981-08-19 | 1983-02-24 | Hitachi Ltd | Etching method |
WO1987005441A1 (en) * | 1986-03-05 | 1987-09-11 | Sumitomo Electric Industries, Ltd. | Semiconductor device and a method of producing the same |
-
1976
- 1976-06-18 JP JP7108076A patent/JPS52154351A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5831531A (en) * | 1981-08-19 | 1983-02-24 | Hitachi Ltd | Etching method |
JPH04390B2 (en) * | 1981-08-19 | 1992-01-07 | Hitachi Ltd | |
WO1987005441A1 (en) * | 1986-03-05 | 1987-09-11 | Sumitomo Electric Industries, Ltd. | Semiconductor device and a method of producing the same |
US4757033A (en) * | 1986-03-05 | 1988-07-12 | Sumitomo Electric Industries, Ltd. | Semiconductor device manufacturing by sequential ion and wet etchings prior to lift-off metallization |
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