JPS52154351A - Formation of electrode contact holes in semiconductor devices - Google Patents

Formation of electrode contact holes in semiconductor devices

Info

Publication number
JPS52154351A
JPS52154351A JP7108076A JP7108076A JPS52154351A JP S52154351 A JPS52154351 A JP S52154351A JP 7108076 A JP7108076 A JP 7108076A JP 7108076 A JP7108076 A JP 7108076A JP S52154351 A JPS52154351 A JP S52154351A
Authority
JP
Japan
Prior art keywords
electrode contact
contact holes
formation
semiconductor devices
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7108076A
Other languages
Japanese (ja)
Inventor
Yuji Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7108076A priority Critical patent/JPS52154351A/en
Publication of JPS52154351A publication Critical patent/JPS52154351A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: Electrode contact holes are formed highly accurately and finely by using dry etching, such as plasma etching, etc., which permits fine working of high accuracy at the time of forming through-holes in a silicon nitride film.
COPYRIGHT: (C)1977,JPO&Japio
JP7108076A 1976-06-18 1976-06-18 Formation of electrode contact holes in semiconductor devices Pending JPS52154351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7108076A JPS52154351A (en) 1976-06-18 1976-06-18 Formation of electrode contact holes in semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7108076A JPS52154351A (en) 1976-06-18 1976-06-18 Formation of electrode contact holes in semiconductor devices

Publications (1)

Publication Number Publication Date
JPS52154351A true JPS52154351A (en) 1977-12-22

Family

ID=13450176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7108076A Pending JPS52154351A (en) 1976-06-18 1976-06-18 Formation of electrode contact holes in semiconductor devices

Country Status (1)

Country Link
JP (1) JPS52154351A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831531A (en) * 1981-08-19 1983-02-24 Hitachi Ltd Etching method
WO1987005441A1 (en) * 1986-03-05 1987-09-11 Sumitomo Electric Industries, Ltd. Semiconductor device and a method of producing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831531A (en) * 1981-08-19 1983-02-24 Hitachi Ltd Etching method
JPH04390B2 (en) * 1981-08-19 1992-01-07 Hitachi Ltd
WO1987005441A1 (en) * 1986-03-05 1987-09-11 Sumitomo Electric Industries, Ltd. Semiconductor device and a method of producing the same
US4757033A (en) * 1986-03-05 1988-07-12 Sumitomo Electric Industries, Ltd. Semiconductor device manufacturing by sequential ion and wet etchings prior to lift-off metallization

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