JPS56277A - Forming method of metal layer pattern - Google Patents
Forming method of metal layer patternInfo
- Publication number
- JPS56277A JPS56277A JP7372679A JP7372679A JPS56277A JP S56277 A JPS56277 A JP S56277A JP 7372679 A JP7372679 A JP 7372679A JP 7372679 A JP7372679 A JP 7372679A JP S56277 A JPS56277 A JP S56277A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- high melting
- plasma
- pattern
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To easily form fine patterns of high melting point metals, etc. by a method wherein plasma CVD process is used to form silicon nitride film on a metal layer, the silicon nitride film is patterned by photography etching process, which pattern is used as mask for dry etching.
CONSTITUTION: In pattern forming process of high melting metal or high melting metal silicide layer, for example, thermal oxidation is used to form an SiO2 layer 12 on the surface of an Si substrate 11, then an Mo layer 13 is formed in sputtering device. On the Mo layer 13, Si3N4 layer 14 is formed by plasma CVD method. Then, positive type photo-resist layer 15 is applied and photo-resist pattern is formed, then CF4 plasma is used to dry-etch Si3N4 layer 14 and followed by removing the resist layer 15 by N2 plasma, then the Mo layer 13 is etched by dry etching. In this case, the Si3N4 layer 14 is little etched so that fine patterns are easily formed.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7372679A JPS56277A (en) | 1979-06-12 | 1979-06-12 | Forming method of metal layer pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7372679A JPS56277A (en) | 1979-06-12 | 1979-06-12 | Forming method of metal layer pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56277A true JPS56277A (en) | 1981-01-06 |
Family
ID=13526512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7372679A Pending JPS56277A (en) | 1979-06-12 | 1979-06-12 | Forming method of metal layer pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56277A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57172737A (en) * | 1981-04-17 | 1982-10-23 | Oki Electric Ind Co Ltd | Forming method of throughhole |
US4414057A (en) * | 1982-12-03 | 1983-11-08 | Inmos Corporation | Anisotropic silicide etching process |
JPS61138097U (en) * | 1985-02-15 | 1986-08-27 | ||
KR100505570B1 (en) * | 1997-12-17 | 2005-10-21 | 삼성전자주식회사 | Method for processing the surface of a material layer in a manufacturing process of a semiconductor device and method for forming a material layer using the same |
-
1979
- 1979-06-12 JP JP7372679A patent/JPS56277A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57172737A (en) * | 1981-04-17 | 1982-10-23 | Oki Electric Ind Co Ltd | Forming method of throughhole |
US4414057A (en) * | 1982-12-03 | 1983-11-08 | Inmos Corporation | Anisotropic silicide etching process |
JPS61138097U (en) * | 1985-02-15 | 1986-08-27 | ||
KR100505570B1 (en) * | 1997-12-17 | 2005-10-21 | 삼성전자주식회사 | Method for processing the surface of a material layer in a manufacturing process of a semiconductor device and method for forming a material layer using the same |
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