JPS5519873A - Forming method of metallic layer pattern for semiconductor - Google Patents

Forming method of metallic layer pattern for semiconductor

Info

Publication number
JPS5519873A
JPS5519873A JP9291178A JP9291178A JPS5519873A JP S5519873 A JPS5519873 A JP S5519873A JP 9291178 A JP9291178 A JP 9291178A JP 9291178 A JP9291178 A JP 9291178A JP S5519873 A JPS5519873 A JP S5519873A
Authority
JP
Japan
Prior art keywords
film
layer
etched
etching
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9291178A
Other languages
Japanese (ja)
Inventor
Tatsuya Enomoto
Hiroji Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9291178A priority Critical patent/JPS5519873A/en
Publication of JPS5519873A publication Critical patent/JPS5519873A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To facilitate forming of a pattern by covering a metal, which is inert to oxigen and is able to be etched, on a metal layer when making a metallic layer pattern made of Al or Al alloy by means of the plasma etching on an oxidized film which covers a semiconductor substrate.
CONSTITUTION: A metal layer 3, made of Al or Al alloy, is formed on an SiO2 film 2 that covers an Si substrate 1. A resistor film 5 that has a given pattern, is provided on the layer 3, and with this film being used as a mask, the layer 3 is etched by means of the plasma etching. But prior to the etching, an Al2O3 film, if it exists on the film 3, is removed, and a metal 6, which is inert to O2 and is able to be etched by means of plasme, such as Ti is provided before the film 5 is formed. Then Ti 6 is removed by the use of tetrafluoro carbonic acid gas in a reaction chamber, and the layer 3 is etched by means of the plasme etching to form the given pattern. By so doing, the surface of the layer 3 is kept clean when it is etched, thus desirable etching is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP9291178A 1978-07-28 1978-07-28 Forming method of metallic layer pattern for semiconductor Pending JPS5519873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9291178A JPS5519873A (en) 1978-07-28 1978-07-28 Forming method of metallic layer pattern for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9291178A JPS5519873A (en) 1978-07-28 1978-07-28 Forming method of metallic layer pattern for semiconductor

Publications (1)

Publication Number Publication Date
JPS5519873A true JPS5519873A (en) 1980-02-12

Family

ID=14067656

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9291178A Pending JPS5519873A (en) 1978-07-28 1978-07-28 Forming method of metallic layer pattern for semiconductor

Country Status (1)

Country Link
JP (1) JPS5519873A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5739538A (en) * 1980-08-20 1982-03-04 Matsushita Electric Ind Co Ltd Etching method of aluminum
JPS5750434A (en) * 1980-09-11 1982-03-24 Toshiba Corp Plasma etching method
JPS57130429A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Formation of electrode wiring
JPS57198633A (en) * 1981-05-22 1982-12-06 Western Electric Co Method of producing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS556844A (en) * 1978-06-28 1980-01-18 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of formating wiring pattern

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS556844A (en) * 1978-06-28 1980-01-18 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of formating wiring pattern

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5739538A (en) * 1980-08-20 1982-03-04 Matsushita Electric Ind Co Ltd Etching method of aluminum
JPS5750434A (en) * 1980-09-11 1982-03-24 Toshiba Corp Plasma etching method
JPS57130429A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Formation of electrode wiring
JPS57198633A (en) * 1981-05-22 1982-12-06 Western Electric Co Method of producing semiconductor device

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