JPS56116880A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS56116880A
JPS56116880A JP1920380A JP1920380A JPS56116880A JP S56116880 A JPS56116880 A JP S56116880A JP 1920380 A JP1920380 A JP 1920380A JP 1920380 A JP1920380 A JP 1920380A JP S56116880 A JPS56116880 A JP S56116880A
Authority
JP
Japan
Prior art keywords
gas
plasma etching
substrate
subjected
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1920380A
Other languages
Japanese (ja)
Inventor
Yasuhiro Horiike
Masahiro Shibagaki
Takuji Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1920380A priority Critical patent/JPS56116880A/en
Publication of JPS56116880A publication Critical patent/JPS56116880A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form a desired fine pattern efficiently by a method wherein a coating film of a substrate is subjected to plasma etching by a gas containing halogen and, subsequently, a surface of said substrate is subjected to plasma etching by a gas containing fluorine and chlorine.
CONSTITUTION: In producing an LSI or the like, a coating film 2 such as SiO2 or the like provided on a semiconductor substrate 1 such as Si or the like is subjected to plasma etching through a mask of a resist 3 by using a gas of CF4+H2 containing a halogen element to remove said film 2 selectively. Subsequently, single crystal Si of the substrate 1 is etched by gas plasma of CF4 gas added with Cl2. By this method, C inhibiting the etching of Si is removed and, at the same time, F generating undercut of Si is removed as FCl by a reaction of F and Cl. In this case, when a Cl2 concn. is 40% or less, a vertical etching cross area 7 is generated and, when 60% or more, an anisotropic cross area with inclination is formed.
COPYRIGHT: (C)1981,JPO&Japio
JP1920380A 1980-02-20 1980-02-20 Plasma etching method Pending JPS56116880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1920380A JPS56116880A (en) 1980-02-20 1980-02-20 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1920380A JPS56116880A (en) 1980-02-20 1980-02-20 Plasma etching method

Publications (1)

Publication Number Publication Date
JPS56116880A true JPS56116880A (en) 1981-09-12

Family

ID=11992791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1920380A Pending JPS56116880A (en) 1980-02-20 1980-02-20 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS56116880A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59161823A (en) * 1983-03-07 1984-09-12 Hitachi Ltd Method for controlling anisotropic etching
JPS6050923A (en) * 1983-08-31 1985-03-22 Hitachi Ltd Method of plasma surface treatment and device therefor
US5376211A (en) * 1990-09-29 1994-12-27 Tokyo Electron Limited Magnetron plasma processing apparatus and processing method
JPH07193056A (en) * 1994-07-11 1995-07-28 Hitachi Ltd Etching control method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59161823A (en) * 1983-03-07 1984-09-12 Hitachi Ltd Method for controlling anisotropic etching
JPS6050923A (en) * 1983-08-31 1985-03-22 Hitachi Ltd Method of plasma surface treatment and device therefor
JPH0473287B2 (en) * 1983-08-31 1992-11-20 Hitachi Ltd
US5376211A (en) * 1990-09-29 1994-12-27 Tokyo Electron Limited Magnetron plasma processing apparatus and processing method
EP0663683A2 (en) * 1990-09-29 1995-07-19 Tokyo Electron Limited Magnetron plasma processing apparatus and processing method
EP0663683A3 (en) * 1990-09-29 1995-10-25 Tokyo Electron Ltd Magnetron plasma processing apparatus and processing method.
US5660671A (en) * 1990-09-29 1997-08-26 Tokyo Electron Limited Magnetron plasma processing apparatus and processing method
JPH07193056A (en) * 1994-07-11 1995-07-28 Hitachi Ltd Etching control method

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