JPS56116880A - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- JPS56116880A JPS56116880A JP1920380A JP1920380A JPS56116880A JP S56116880 A JPS56116880 A JP S56116880A JP 1920380 A JP1920380 A JP 1920380A JP 1920380 A JP1920380 A JP 1920380A JP S56116880 A JPS56116880 A JP S56116880A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- plasma etching
- substrate
- subjected
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To form a desired fine pattern efficiently by a method wherein a coating film of a substrate is subjected to plasma etching by a gas containing halogen and, subsequently, a surface of said substrate is subjected to plasma etching by a gas containing fluorine and chlorine.
CONSTITUTION: In producing an LSI or the like, a coating film 2 such as SiO2 or the like provided on a semiconductor substrate 1 such as Si or the like is subjected to plasma etching through a mask of a resist 3 by using a gas of CF4+H2 containing a halogen element to remove said film 2 selectively. Subsequently, single crystal Si of the substrate 1 is etched by gas plasma of CF4 gas added with Cl2. By this method, C inhibiting the etching of Si is removed and, at the same time, F generating undercut of Si is removed as FCl by a reaction of F and Cl. In this case, when a Cl2 concn. is 40% or less, a vertical etching cross area 7 is generated and, when 60% or more, an anisotropic cross area with inclination is formed.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1920380A JPS56116880A (en) | 1980-02-20 | 1980-02-20 | Plasma etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1920380A JPS56116880A (en) | 1980-02-20 | 1980-02-20 | Plasma etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56116880A true JPS56116880A (en) | 1981-09-12 |
Family
ID=11992791
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1920380A Pending JPS56116880A (en) | 1980-02-20 | 1980-02-20 | Plasma etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56116880A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59161823A (en) * | 1983-03-07 | 1984-09-12 | Hitachi Ltd | Method for controlling anisotropic etching |
JPS6050923A (en) * | 1983-08-31 | 1985-03-22 | Hitachi Ltd | Method of plasma surface treatment and device therefor |
US5376211A (en) * | 1990-09-29 | 1994-12-27 | Tokyo Electron Limited | Magnetron plasma processing apparatus and processing method |
JPH07193056A (en) * | 1994-07-11 | 1995-07-28 | Hitachi Ltd | Etching control method |
-
1980
- 1980-02-20 JP JP1920380A patent/JPS56116880A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59161823A (en) * | 1983-03-07 | 1984-09-12 | Hitachi Ltd | Method for controlling anisotropic etching |
JPS6050923A (en) * | 1983-08-31 | 1985-03-22 | Hitachi Ltd | Method of plasma surface treatment and device therefor |
JPH0473287B2 (en) * | 1983-08-31 | 1992-11-20 | Hitachi Ltd | |
US5376211A (en) * | 1990-09-29 | 1994-12-27 | Tokyo Electron Limited | Magnetron plasma processing apparatus and processing method |
EP0663683A2 (en) * | 1990-09-29 | 1995-07-19 | Tokyo Electron Limited | Magnetron plasma processing apparatus and processing method |
EP0663683A3 (en) * | 1990-09-29 | 1995-10-25 | Tokyo Electron Ltd | Magnetron plasma processing apparatus and processing method. |
US5660671A (en) * | 1990-09-29 | 1997-08-26 | Tokyo Electron Limited | Magnetron plasma processing apparatus and processing method |
JPH07193056A (en) * | 1994-07-11 | 1995-07-28 | Hitachi Ltd | Etching control method |
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