JPS5477068A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
JPS5477068A
JPS5477068A JP14392377A JP14392377A JPS5477068A JP S5477068 A JPS5477068 A JP S5477068A JP 14392377 A JP14392377 A JP 14392377A JP 14392377 A JP14392377 A JP 14392377A JP S5477068 A JPS5477068 A JP S5477068A
Authority
JP
Japan
Prior art keywords
layer
etched
etching
molybdenum
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14392377A
Other languages
Japanese (ja)
Inventor
Yoshio Honma
Hisao Nozawa
Yukiyoshi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14392377A priority Critical patent/JPS5477068A/en
Publication of JPS5477068A publication Critical patent/JPS5477068A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a pattern forming method of high accuracy which does not cause any pollution by mask material by using molybdenum or molybdenum alloy as an etching mask.
CONSTITUTION: The layer to be etched 23 composed of polycrystalline silicon is formed on a Si substrate 21 and a molybdenum layer 26 which becomes a mask is formed. After this layer 26 is etched to specified pattern, selective etching is performed by sputter etching using Freon gas as atmosphere. Even in case the layer to be etched 23 is SiO2, Si3N4 or PSG, highly accurate etching free from polution may be performed. Forming a non-photosensitive high polymer resin layer as the layer to be etched 23 and plasma etching the same will also give equally good results.
COPYRIGHT: (C)1979,JPO&Japio
JP14392377A 1977-12-02 1977-12-02 Pattern forming method Pending JPS5477068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14392377A JPS5477068A (en) 1977-12-02 1977-12-02 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14392377A JPS5477068A (en) 1977-12-02 1977-12-02 Pattern forming method

Publications (1)

Publication Number Publication Date
JPS5477068A true JPS5477068A (en) 1979-06-20

Family

ID=15350233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14392377A Pending JPS5477068A (en) 1977-12-02 1977-12-02 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS5477068A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5693328A (en) * 1979-12-26 1981-07-28 Nec Corp Formation of mask pattern
JPS5749235A (en) * 1980-07-11 1982-03-23 Philips Nv Method of producing semiconductor device
JPS58142526A (en) * 1982-02-19 1983-08-24 Comput Basic Mach Technol Res Assoc Patterning method of thin film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021679A (en) * 1973-06-25 1975-03-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021679A (en) * 1973-06-25 1975-03-07

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5693328A (en) * 1979-12-26 1981-07-28 Nec Corp Formation of mask pattern
JPS5749235A (en) * 1980-07-11 1982-03-23 Philips Nv Method of producing semiconductor device
JPH0345532B2 (en) * 1980-07-11 1991-07-11 Fuiritsupusu Furuuiranpenfuaburiken Nv
JPS58142526A (en) * 1982-02-19 1983-08-24 Comput Basic Mach Technol Res Assoc Patterning method of thin film

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