JPS5477068A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPS5477068A JPS5477068A JP14392377A JP14392377A JPS5477068A JP S5477068 A JPS5477068 A JP S5477068A JP 14392377 A JP14392377 A JP 14392377A JP 14392377 A JP14392377 A JP 14392377A JP S5477068 A JPS5477068 A JP S5477068A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etched
- etching
- molybdenum
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a pattern forming method of high accuracy which does not cause any pollution by mask material by using molybdenum or molybdenum alloy as an etching mask.
CONSTITUTION: The layer to be etched 23 composed of polycrystalline silicon is formed on a Si substrate 21 and a molybdenum layer 26 which becomes a mask is formed. After this layer 26 is etched to specified pattern, selective etching is performed by sputter etching using Freon gas as atmosphere. Even in case the layer to be etched 23 is SiO2, Si3N4 or PSG, highly accurate etching free from polution may be performed. Forming a non-photosensitive high polymer resin layer as the layer to be etched 23 and plasma etching the same will also give equally good results.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14392377A JPS5477068A (en) | 1977-12-02 | 1977-12-02 | Pattern forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14392377A JPS5477068A (en) | 1977-12-02 | 1977-12-02 | Pattern forming method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5477068A true JPS5477068A (en) | 1979-06-20 |
Family
ID=15350233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14392377A Pending JPS5477068A (en) | 1977-12-02 | 1977-12-02 | Pattern forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5477068A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5693328A (en) * | 1979-12-26 | 1981-07-28 | Nec Corp | Formation of mask pattern |
JPS5749235A (en) * | 1980-07-11 | 1982-03-23 | Philips Nv | Method of producing semiconductor device |
JPS58142526A (en) * | 1982-02-19 | 1983-08-24 | Comput Basic Mach Technol Res Assoc | Patterning method of thin film |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5021679A (en) * | 1973-06-25 | 1975-03-07 |
-
1977
- 1977-12-02 JP JP14392377A patent/JPS5477068A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5021679A (en) * | 1973-06-25 | 1975-03-07 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5693328A (en) * | 1979-12-26 | 1981-07-28 | Nec Corp | Formation of mask pattern |
JPS5749235A (en) * | 1980-07-11 | 1982-03-23 | Philips Nv | Method of producing semiconductor device |
JPH0345532B2 (en) * | 1980-07-11 | 1991-07-11 | Fuiritsupusu Furuuiranpenfuaburiken Nv | |
JPS58142526A (en) * | 1982-02-19 | 1983-08-24 | Comput Basic Mach Technol Res Assoc | Patterning method of thin film |
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