JPS5790940A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5790940A
JPS5790940A JP16693080A JP16693080A JPS5790940A JP S5790940 A JPS5790940 A JP S5790940A JP 16693080 A JP16693080 A JP 16693080A JP 16693080 A JP16693080 A JP 16693080A JP S5790940 A JPS5790940 A JP S5790940A
Authority
JP
Japan
Prior art keywords
film
section
films
gate electrode
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16693080A
Other languages
Japanese (ja)
Other versions
JPH028451B2 (en
Inventor
Hiroshi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16693080A priority Critical patent/JPS5790940A/en
Publication of JPS5790940A publication Critical patent/JPS5790940A/en
Publication of JPH028451B2 publication Critical patent/JPH028451B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

PURPOSE:To obtain a minute electrode or wiring with high accuracy by using an isotropic etching method for the etching of a film section on an overhang section or a stage differnce section and a reactive ion etching method, which approximately functions in the vertical direction to a substrate, for the etching of a film section where there are no said sections. CONSTITUTION:The first layer gate electrode 5, a layer insulating film 6 and a gate oxide film 8 for a peripheral circuit are formed onto an element region of the P type Si substrate 1 partitioned by field insulating films 2, and a polycrystal Si film 9 into which N type impurities are doped is deposited on the whole surface containing these. Resist films 221, 222 are shaped to the second layer gate electrode prearranged section of the element region and its peripheral circuit section, and the second layer gate electrode 10 consisting of the polycrystal Si film 9 is formed through the etching of an isotropic CF4 plasma gas without leaving the electrode 10 at the overhang section 7. The films 221, 222 are remolded to films 231, 232, the new films are etched by reactive ions, and a gate electrode 10' completely conforming to the film 232 is obtained.
JP16693080A 1980-11-27 1980-11-27 Manufacture of semiconductor device Granted JPS5790940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16693080A JPS5790940A (en) 1980-11-27 1980-11-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16693080A JPS5790940A (en) 1980-11-27 1980-11-27 Manufacture of semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP61253219A Division JPS6297331A (en) 1986-10-24 1986-10-24 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5790940A true JPS5790940A (en) 1982-06-05
JPH028451B2 JPH028451B2 (en) 1990-02-23

Family

ID=15840289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16693080A Granted JPS5790940A (en) 1980-11-27 1980-11-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5790940A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599942A (en) * 1982-07-08 1984-01-19 Mitsubishi Electric Corp Forming method for wiring pattern
JPH01181443A (en) * 1988-01-08 1989-07-19 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591130A (en) * 1978-12-27 1980-07-10 Matsushita Electric Ind Co Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591130A (en) * 1978-12-27 1980-07-10 Matsushita Electric Ind Co Ltd Production of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599942A (en) * 1982-07-08 1984-01-19 Mitsubishi Electric Corp Forming method for wiring pattern
JPH01181443A (en) * 1988-01-08 1989-07-19 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture

Also Published As

Publication number Publication date
JPH028451B2 (en) 1990-02-23

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