JPS55107244A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55107244A JPS55107244A JP1387379A JP1387379A JPS55107244A JP S55107244 A JPS55107244 A JP S55107244A JP 1387379 A JP1387379 A JP 1387379A JP 1387379 A JP1387379 A JP 1387379A JP S55107244 A JPS55107244 A JP S55107244A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- poly
- selectively
- thin
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To increase integration degree by a method wherein a poly-Si layer uniformly formed is selectively etched to form a thin layer portion and a highly resistance element in that portion.
CONSTITUTION: An element isolating region 23 is made by selectively oxidizing a Si substrate 21, and a poly-Si layer 24 is accumulated on the substrate after the formation of an oxide gate film. Next by providing a resist mask 25, ion injection is added to the surface layer while selecting the quantity of addition and energy. If the mask is removed and plasma etching is added, a thin layer portion can be made selectively in the ion-injected portion by means of difference in etching speed. The surface is then etched while providing a resist mask 26 so as to make a window selectively in the poly-Si layer 24. By this method, it is possible to control the quantity of injection ions and form a thin poly-Si layer with the resistance value desired readily and accurately in the region specified.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1387379A JPS55107244A (en) | 1979-02-09 | 1979-02-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1387379A JPS55107244A (en) | 1979-02-09 | 1979-02-09 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55107244A true JPS55107244A (en) | 1980-08-16 |
Family
ID=11845342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1387379A Pending JPS55107244A (en) | 1979-02-09 | 1979-02-09 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55107244A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62299050A (en) * | 1986-06-18 | 1987-12-26 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
US5436177A (en) * | 1992-08-19 | 1995-07-25 | Sgs-Thomson Microelectronics S.R.L. | Process for forming implanted regions with lowered channeling risk on semiconductors |
-
1979
- 1979-02-09 JP JP1387379A patent/JPS55107244A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62299050A (en) * | 1986-06-18 | 1987-12-26 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
US5436177A (en) * | 1992-08-19 | 1995-07-25 | Sgs-Thomson Microelectronics S.R.L. | Process for forming implanted regions with lowered channeling risk on semiconductors |
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