JPS5679446A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5679446A JPS5679446A JP15707179A JP15707179A JPS5679446A JP S5679446 A JPS5679446 A JP S5679446A JP 15707179 A JP15707179 A JP 15707179A JP 15707179 A JP15707179 A JP 15707179A JP S5679446 A JPS5679446 A JP S5679446A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- pattern
- mask
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Abstract
PURPOSE:To obtain specified dimensions eliminating encroaching of an oxide film into an element region by etching an insulator film to remove parts on an element region with a metal mask provided on a specified region of the insulator film when the region is formed on a semiconductor substrate. CONSTITUTION:An SiO2 film 12 is applied on a p type Si substrate 11 and provided with a resist film pattern 13. Wigh this film as a mask, a p type impurity ion is injected through the film 12 to form a p<+> type antiinversion layer 14 on the surface of a substrate 11. Then, an Al film is applied on the entire surface including the pattern 13 to isolate the Al film 15a on the film 12 from the Al film 15b on the pattern 13 and then the pattern 13 is removed with the film 15b thereon. With the film 15a as mask, the exposed film 12 is etched away only leaving a part as a film 16 on the film 14. A gate electrode 19 is provided on the substrate 11 exposed between the films through a gate oxide film 18, and with the electrode 19 as mask, an N<+> type source and drain regions 20 and 21 are diffused into the substrate 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15707179A JPS5679446A (en) | 1979-12-04 | 1979-12-04 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15707179A JPS5679446A (en) | 1979-12-04 | 1979-12-04 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5679446A true JPS5679446A (en) | 1981-06-30 |
Family
ID=15641592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15707179A Pending JPS5679446A (en) | 1979-12-04 | 1979-12-04 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5679446A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61500046A (en) * | 1983-09-30 | 1986-01-09 | ヒュ−ズ・エアクラフト・カンパニ− | Method of manufacturing MOSFET devices |
| US5141884A (en) * | 1990-08-18 | 1992-08-25 | Samsung Electronics Co., Ltd. | Isolation method of semiconductor device |
-
1979
- 1979-12-04 JP JP15707179A patent/JPS5679446A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61500046A (en) * | 1983-09-30 | 1986-01-09 | ヒュ−ズ・エアクラフト・カンパニ− | Method of manufacturing MOSFET devices |
| US5141884A (en) * | 1990-08-18 | 1992-08-25 | Samsung Electronics Co., Ltd. | Isolation method of semiconductor device |
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