JPS6412578A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6412578A JPS6412578A JP16950387A JP16950387A JPS6412578A JP S6412578 A JPS6412578 A JP S6412578A JP 16950387 A JP16950387 A JP 16950387A JP 16950387 A JP16950387 A JP 16950387A JP S6412578 A JPS6412578 A JP S6412578A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- channel part
- built
- pattern
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 238000011109 contamination Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Abstract
PURPOSE:To protect a channel part from contamination by a method wherein the channel part is protected by an insulating layer before a high impurity concentration semiconductor layer is built up to form source and drain regions. CONSTITUTION:After a p-type Si layer 101 is formed on a glass substrate 100, a silicon nitride layer 102 is formed and, after photoresist is applied and a required pattern is formed, the layer 102 is etched with the pattern as a mask. After the photoresist pattern is removed, an n<+>type Si layer 103 is built up. Then resist 104 is applied again to make the surface flat. After that, reactive ion etching is applied so as to leave the layer 102 and the layer 103. Then, after a silicon nitride layer 105 is built up, the layer 105 is patterned to form windows for leading out electrodes. Then electrodes 106 are formed. With this constitution, as the channel part is protected by the insulating layer, the channel part is not contaminated. Therefore, a semiconductor device of stable characteristics can be produced with a high reproducibility.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16950387A JPS6412578A (en) | 1987-07-07 | 1987-07-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16950387A JPS6412578A (en) | 1987-07-07 | 1987-07-07 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6412578A true JPS6412578A (en) | 1989-01-17 |
Family
ID=15887721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16950387A Pending JPS6412578A (en) | 1987-07-07 | 1987-07-07 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6412578A (en) |
-
1987
- 1987-07-07 JP JP16950387A patent/JPS6412578A/en active Pending
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