JPS5650579A - Manufacture of junction type field effect semiconductor device - Google Patents
Manufacture of junction type field effect semiconductor deviceInfo
- Publication number
- JPS5650579A JPS5650579A JP12539479A JP12539479A JPS5650579A JP S5650579 A JPS5650579 A JP S5650579A JP 12539479 A JP12539479 A JP 12539479A JP 12539479 A JP12539479 A JP 12539479A JP S5650579 A JPS5650579 A JP S5650579A
- Authority
- JP
- Japan
- Prior art keywords
- diffusing
- gate
- drain
- source
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To improve the improper withstand voltage of a junction type field effect semiconductor device by forming gate diffused windows of source and drain of one mask and thereby improving the diffusing mask matching accuracy in a process of manufacturing the transistor. CONSTITUTION:An n type epitaxial layer 2 is grown on a P type silicon substrate 1 of a wafer, a surface thermal oxide film (SiO2 film) 3 is formed on the wafer, and source and drain diffusing windows 4 and gate diffusing window 7 are simultaneously formed by an etching treatment with one photomask. Subsequently, the gate diffusing window 7 is shielded with a CVD.SiO2 film 9. Phosphorus (or arsenid) is deposited (or ion implated) or diffused through the source and drain diffusing windows, and n<+> type source and drain 5, 6 are formed. Further, a CVD.SiO2film 9 is removed with etchant, boron is diffused through the gate diffusing window 7, and a p<+> type gate 8 is thus formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12539479A JPS5650579A (en) | 1979-10-01 | 1979-10-01 | Manufacture of junction type field effect semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12539479A JPS5650579A (en) | 1979-10-01 | 1979-10-01 | Manufacture of junction type field effect semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5650579A true JPS5650579A (en) | 1981-05-07 |
Family
ID=14909047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12539479A Pending JPS5650579A (en) | 1979-10-01 | 1979-10-01 | Manufacture of junction type field effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5650579A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5437625A (en) * | 1992-04-06 | 1995-08-01 | Kurihashi; Katsuaki | Apparatus for intubation of lacrimal drainage pathway |
| EP1048275A2 (en) | 1999-04-28 | 2000-11-02 | MLC Limited Company | Apparatus for intubation of lacrimal duct |
-
1979
- 1979-10-01 JP JP12539479A patent/JPS5650579A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5437625A (en) * | 1992-04-06 | 1995-08-01 | Kurihashi; Katsuaki | Apparatus for intubation of lacrimal drainage pathway |
| EP1048275A2 (en) | 1999-04-28 | 2000-11-02 | MLC Limited Company | Apparatus for intubation of lacrimal duct |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1335813A (en) | Transistor and method of manufacturing the same | |
| JPS5736842A (en) | Semiconductor integrated circuit device | |
| JPS5650579A (en) | Manufacture of junction type field effect semiconductor device | |
| JPS5583267A (en) | Method of fabricating semiconductor device | |
| JPS54153583A (en) | Semiconductor device | |
| JPS644019A (en) | Manufacture of semiconductor device | |
| JPS5533037A (en) | Manufacture of semiconductor device | |
| JPS5613735A (en) | Manufacture of semiconductor device | |
| JPS55102269A (en) | Method of fabricating semiconductor device | |
| JPS55163879A (en) | Manufacture of semiconductor device | |
| JPS561572A (en) | Manufacture of semiconductor device | |
| JPS5748248A (en) | Manufacture of semiconductor device | |
| JPS5513953A (en) | Complementary integrated circuit | |
| JPS5670669A (en) | Longitudinal semiconductor device | |
| JPS55166962A (en) | Manufacture of semiconductor device | |
| JPS5591872A (en) | Manufacture of semiconductor device | |
| JPS5791537A (en) | Manufacture of semiconductor device | |
| JPS57204145A (en) | Manufacture of semiconductor device | |
| JPS5642373A (en) | Manufacture of semiconductor device | |
| JPS6420648A (en) | Semiconductor device and manufacture thereof | |
| JPS5685853A (en) | Manufacture of semiconductor device | |
| JPS57192073A (en) | Semiconductor device | |
| JPS5656675A (en) | Semiconductor device on insulated substrate | |
| JPS5619670A (en) | Manufacture of mos semiconductor device | |
| JPS54158878A (en) | Manufacture of semiconductor device |