JPS55166962A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55166962A
JPS55166962A JP7437879A JP7437879A JPS55166962A JP S55166962 A JPS55166962 A JP S55166962A JP 7437879 A JP7437879 A JP 7437879A JP 7437879 A JP7437879 A JP 7437879A JP S55166962 A JPS55166962 A JP S55166962A
Authority
JP
Japan
Prior art keywords
film
polycrystalline silicon
semiconductor
etched
phosphorus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7437879A
Other languages
Japanese (ja)
Inventor
Masanori Kikuchi
Shuichi Oya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7437879A priority Critical patent/JPS55166962A/en
Publication of JPS55166962A publication Critical patent/JPS55166962A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To adapt for high density integration of a semiconductor device by determining the shape of a semiconductor film in self-matching manner with a gate electrode as a mask. CONSTITUTION:There are formed a first insulating film 2, a first semiconductor film 3 added with impurity, a second insulating film 4 and a second semiconductor film 5 on one main surface of a semiconductor substrate 1. Then, a silicon oxide film 6a is formed thereon, with the film 6a as a mask a polycrystalline silicon film 5 is determined in shape, and phosphorus is diffused on the exposed side surface 7 of the second polycrystalline silicon film 5. Then, the silicon oxide film 4 is etched with second polycrystalline silicon film as a mask. Then, with the second polycrystalline silicon film 5 and second gate silicon oxide film 4 as masks the first polycrystalline silicon film 3 added with phosphorus is etched. In this case the region added with phosphorus of the second polycrystalline silicon film is also etched and removed.
JP7437879A 1979-06-13 1979-06-13 Manufacture of semiconductor device Pending JPS55166962A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7437879A JPS55166962A (en) 1979-06-13 1979-06-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7437879A JPS55166962A (en) 1979-06-13 1979-06-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55166962A true JPS55166962A (en) 1980-12-26

Family

ID=13545439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7437879A Pending JPS55166962A (en) 1979-06-13 1979-06-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55166962A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0187278A2 (en) * 1984-12-07 1986-07-16 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0187278A2 (en) * 1984-12-07 1986-07-16 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US4720323A (en) * 1984-12-07 1988-01-19 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device
US4768080A (en) * 1984-12-07 1988-08-30 Kabushiki Kaisha Toshiba Semiconductor device having floating and control gates

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