JPS5591877A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5591877A
JPS5591877A JP16581678A JP16581678A JPS5591877A JP S5591877 A JPS5591877 A JP S5591877A JP 16581678 A JP16581678 A JP 16581678A JP 16581678 A JP16581678 A JP 16581678A JP S5591877 A JPS5591877 A JP S5591877A
Authority
JP
Japan
Prior art keywords
channel cut
window
requiring high
opened
operated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16581678A
Other languages
Japanese (ja)
Inventor
Izumi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16581678A priority Critical patent/JPS5591877A/en
Publication of JPS5591877A publication Critical patent/JPS5591877A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: To achieve high integration by making it possible to form channel cut regions of different channel cut concentrations.
CONSTITUTION: Oxide film 22 and silicon nitride film 23 are formed on substrate 21, and the entire portion is window-opened wherein channel cut regions are to be formed through proper mask, and then ion injection is operated for low concentration channel cut. Next, the portion requiring high concentration channel cut is masked and ion injection is operated to get the specified concentration after window- opened through the mask. In the part not requiring high concentration channel cut, it is possible to maintain a high breakdown voltage in the junction between the source-drain region and the channel cut region. In the part requiring high concentration channel cut, a high breakdown voltage can be maintained by some other means, for example, the use of a pattern margin. Thus, high integration can be achieved.
COPYRIGHT: (C)1980,JPO&Japio
JP16581678A 1978-12-30 1978-12-30 Manufacture of semiconductor device Pending JPS5591877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16581678A JPS5591877A (en) 1978-12-30 1978-12-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16581678A JPS5591877A (en) 1978-12-30 1978-12-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5591877A true JPS5591877A (en) 1980-07-11

Family

ID=15819531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16581678A Pending JPS5591877A (en) 1978-12-30 1978-12-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5591877A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116670A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPS57128975A (en) * 1981-02-02 1982-08-10 Toshiba Corp Manufacture of semiconductor nonvolatile memory storage
JPS57155771A (en) * 1981-03-23 1982-09-25 Hitachi Ltd Semiconductor integrated circuit device
JPS594170A (en) * 1982-06-30 1984-01-10 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5916371A (en) * 1982-07-19 1984-01-27 Nec Corp Nonvolatile semiconductor memory
JPS5935477A (en) * 1982-08-23 1984-02-27 Seiko Epson Corp Semiconductor device
JPS5951561A (en) * 1982-09-17 1984-03-26 Mitsubishi Electric Corp Semiconductor device for memory
JPS5984571A (en) * 1982-11-08 1984-05-16 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPS6127680A (en) * 1984-07-18 1986-02-07 Toshiba Corp Manufacture of semiconductor memory
JPS61131488A (en) * 1984-11-26 1986-06-19 エツセジーエツセ　ミクロエレツトロニカ　ソチエタ　ペル　アノニマ Manufacture of integrated structural body containing non-volatile memory cell and associated transistor having self-matched silicon layer
JPS63205964A (en) * 1987-02-21 1988-08-25 Toshiba Corp Semiconductor storage device and its manufacture
JPH02374A (en) * 1988-12-01 1990-01-05 Mitsubishi Electric Corp Non-volatile semiconductor storage device
JPH02150070A (en) * 1988-11-30 1990-06-08 Mitsubishi Electric Corp Semiconductor memory
JPH02153574A (en) * 1989-05-24 1990-06-13 Hitachi Ltd Manufacture of semiconductor integrated circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120383A (en) * 1977-03-30 1978-10-20 Fujitsu Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120383A (en) * 1977-03-30 1978-10-20 Fujitsu Ltd Production of semiconductor device

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116670A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPS57128975A (en) * 1981-02-02 1982-08-10 Toshiba Corp Manufacture of semiconductor nonvolatile memory storage
JPS57155771A (en) * 1981-03-23 1982-09-25 Hitachi Ltd Semiconductor integrated circuit device
JPS636155B2 (en) * 1982-06-30 1988-02-08 Mitsubishi Electric Corp
JPS594170A (en) * 1982-06-30 1984-01-10 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5916371A (en) * 1982-07-19 1984-01-27 Nec Corp Nonvolatile semiconductor memory
JPS5935477A (en) * 1982-08-23 1984-02-27 Seiko Epson Corp Semiconductor device
JPS5951561A (en) * 1982-09-17 1984-03-26 Mitsubishi Electric Corp Semiconductor device for memory
JPS5984571A (en) * 1982-11-08 1984-05-16 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPH0554268B2 (en) * 1982-11-08 1993-08-12 Hitachi Ltd
JPS6127680A (en) * 1984-07-18 1986-02-07 Toshiba Corp Manufacture of semiconductor memory
JPS6311785B2 (en) * 1984-07-18 1988-03-16 Tokyo Shibaura Electric Co
JPS61131488A (en) * 1984-11-26 1986-06-19 エツセジーエツセ　ミクロエレツトロニカ　ソチエタ　ペル　アノニマ Manufacture of integrated structural body containing non-volatile memory cell and associated transistor having self-matched silicon layer
JPS63205964A (en) * 1987-02-21 1988-08-25 Toshiba Corp Semiconductor storage device and its manufacture
JPH02150070A (en) * 1988-11-30 1990-06-08 Mitsubishi Electric Corp Semiconductor memory
JPH02374A (en) * 1988-12-01 1990-01-05 Mitsubishi Electric Corp Non-volatile semiconductor storage device
JPH02153574A (en) * 1989-05-24 1990-06-13 Hitachi Ltd Manufacture of semiconductor integrated circuit device
JPH0449270B2 (en) * 1989-05-24 1992-08-11 Hitachi Ltd

Similar Documents

Publication Publication Date Title
JPS51127682A (en) Manufacturing process of semiconductor device
JPS5591877A (en) Manufacture of semiconductor device
JPS52101984A (en) Preparation of semiconductor device
JPS5483778A (en) Mos semiconductor device and its manufacture
JPS5458381A (en) Manufacture for semiconductor device
JPS54117691A (en) Production of insulating gate-type semiconductor device
JPS5533037A (en) Manufacture of semiconductor device
JPS52104881A (en) Manufacture for semiconductor device
JPS5613772A (en) Preparation of semiconductor device
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS5739579A (en) Mos semiconductor device and manufacture thereof
JPS5412566A (en) Production of semiconductor device
JPS55157242A (en) Manufacture of semiconductor device
JPS54114983A (en) Semiconductor device
JPS5321582A (en) Mos type semiconductor device
JPS5548950A (en) Manufacturing of semiconductor device
JPS5599763A (en) Semiconductor device
JPS5363987A (en) Junction type field effect transistor
JPS5423483A (en) Manufacture for semiconductor device
JPS5559780A (en) Pn junction field effect transistor and method of fabricating the same
JPS55166962A (en) Manufacture of semiconductor device
JPS56112742A (en) Manufacture of semiconductor device
JPS54151382A (en) Manufacture for semiconductor device
JPS5269276A (en) Production of semiconductor device
JPS5342571A (en) Production of semiconductor device