JPS54114983A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54114983A
JPS54114983A JP2267778A JP2267778A JPS54114983A JP S54114983 A JPS54114983 A JP S54114983A JP 2267778 A JP2267778 A JP 2267778A JP 2267778 A JP2267778 A JP 2267778A JP S54114983 A JPS54114983 A JP S54114983A
Authority
JP
Japan
Prior art keywords
oxide film
forming
region
providing
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2267778A
Other languages
Japanese (ja)
Inventor
Kunihiko Yoshimura
Tetsuji Yuasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2267778A priority Critical patent/JPS54114983A/en
Publication of JPS54114983A publication Critical patent/JPS54114983A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To increase the remote cut off performance, by providing a plurality of channel regions in parallel with the main plane of the substrate and constituting them with layer sectioned with one conductive layer.
CONSTITUTION: The oxide film 2 is provided by performing thermal oxidation of the N type semiconductor substrate 1, forming the source region 8 and drain region 4 with P type impurity diffused. Next, the N type impurity is diffused with high concentration, forming the N+ type region 5. The oxide film of the region including the channel is removed by etching and after providing the oxide film again, forming the regions 7, 8, 9 with ion injection. Finally, the oxide film on the source, drain and gate region is selectively removed, forming the metal electrode.
COPYRIGHT: (C)1979,JPO&Japio
JP2267778A 1978-02-27 1978-02-27 Semiconductor device Pending JPS54114983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2267778A JPS54114983A (en) 1978-02-27 1978-02-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2267778A JPS54114983A (en) 1978-02-27 1978-02-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54114983A true JPS54114983A (en) 1979-09-07

Family

ID=12089485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2267778A Pending JPS54114983A (en) 1978-02-27 1978-02-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54114983A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211278A (en) * 1981-06-23 1982-12-25 Nec Corp Semiconductor device
JPS58197885A (en) * 1982-05-14 1983-11-17 Nec Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211278A (en) * 1981-06-23 1982-12-25 Nec Corp Semiconductor device
JPS58197885A (en) * 1982-05-14 1983-11-17 Nec Corp Semiconductor device
JPH0366811B2 (en) * 1982-05-14 1991-10-18 Nippon Electric Co

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