JPS5458372A - Manufacture for mos type semiconductor integrated circuit - Google Patents

Manufacture for mos type semiconductor integrated circuit

Info

Publication number
JPS5458372A
JPS5458372A JP12446977A JP12446977A JPS5458372A JP S5458372 A JPS5458372 A JP S5458372A JP 12446977 A JP12446977 A JP 12446977A JP 12446977 A JP12446977 A JP 12446977A JP S5458372 A JPS5458372 A JP S5458372A
Authority
JP
Japan
Prior art keywords
film
layer
gate
manufacture
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12446977A
Other languages
Japanese (ja)
Other versions
JPS571908B2 (en
Inventor
Hiroyuki Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP12446977A priority Critical patent/JPS5458372A/en
Publication of JPS5458372A publication Critical patent/JPS5458372A/en
Publication of JPS571908B2 publication Critical patent/JPS571908B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: To form the DSA type MOS device, by omitting the mask alignment when the n++ layer is formed apart from the end of the gate region, through the utilization of the selective oxidation using Si3N4.
CONSTITUTION: The field oxide film 202, gate oxide film 203, and conductive poly Si gate electrode 204 are formed on the p type Si substrate 201, and covering is made with the Si3N4 205. The film 205 is selectively removed and the ions of acceptor impurity are injected, the p+ base layer 208 is made with heat treatment and the oxide thin film 209 is grown with thermal oxidation succeedingly. Next, the film 205 is removed and the donor impurity is diffused on all the surfaces with high concentration sufficiently, then the film 209 is taken as the mask at the source region and the n++ layers 210 and 211 can be obtained slightly apart from the electrode 204 by self-alignment. Next, the n+ layer 212 is made by injecting donor impurity ions, connecting electrically the layer 210 and the channel under the gate. After that, the insulation coating 213 is made as conventioanlly, forming electrodes 210B and 211B
COPYRIGHT: (C)1979,JPO&Japio
JP12446977A 1977-10-19 1977-10-19 Manufacture for mos type semiconductor integrated circuit Granted JPS5458372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12446977A JPS5458372A (en) 1977-10-19 1977-10-19 Manufacture for mos type semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12446977A JPS5458372A (en) 1977-10-19 1977-10-19 Manufacture for mos type semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5458372A true JPS5458372A (en) 1979-05-11
JPS571908B2 JPS571908B2 (en) 1982-01-13

Family

ID=14886285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12446977A Granted JPS5458372A (en) 1977-10-19 1977-10-19 Manufacture for mos type semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5458372A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3606901A1 (en) * 1986-03-03 1987-09-10 Hilti Ag NAIL STRIP
JPS6427513U (en) * 1987-08-08 1989-02-16

Also Published As

Publication number Publication date
JPS571908B2 (en) 1982-01-13

Similar Documents

Publication Publication Date Title
JPS5676574A (en) Schottky injection electrode type semiconductor device
JPS5658259A (en) Semiconductor device and production thereof
JPS5458372A (en) Manufacture for mos type semiconductor integrated circuit
JPS5444483A (en) Mos type semiconductor device and its manufacture
JPS5380986A (en) Manufacture of semiconductor device
JPS5585041A (en) Semiconductor device and its preparation
JPS5632757A (en) Insulated gate type transistor and integrated circuit
JPS5265683A (en) Production of insulated gate type mis semiconductor device
JPS54130883A (en) Production of semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS54117691A (en) Production of insulating gate-type semiconductor device
JPS54139488A (en) Mos semiconductor element and its manufacture
JPS54114984A (en) Semiconductor device
JPS5567166A (en) Preparation of mos type semiconductor device
JPS5515230A (en) Semiconductor device and its manufacturing method
JPS57166067A (en) Bias generating unit for substrate
JPS54102980A (en) Mos-type semiconductor device and its manufacture
JPS5574181A (en) Preparing junction type field effect transistor
JPS54149477A (en) Production of junction type field effect semiconductor device
JPS54114983A (en) Semiconductor device
JPS5753958A (en) Semiconductor device
JPS5739579A (en) Mos semiconductor device and manufacture thereof
JPS5272186A (en) Production of mis type semiconductor device
JPS57132357A (en) Manufacture of semiconductor element
JPS54154979A (en) Manufacture of insulated gate type semiconductor device