JPS57132357A - Manufacture of semiconductor element - Google Patents
Manufacture of semiconductor elementInfo
- Publication number
- JPS57132357A JPS57132357A JP1747881A JP1747881A JPS57132357A JP S57132357 A JPS57132357 A JP S57132357A JP 1747881 A JP1747881 A JP 1747881A JP 1747881 A JP1747881 A JP 1747881A JP S57132357 A JPS57132357 A JP S57132357A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polysilicon layer
- window
- type
- opened
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 5
- 229920005591 polysilicon Polymers 0.000 abstract 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Abstract
PURPOSE:To prevent the deterioration of withstand voltage due to the slip of a mask for the subject semiconductor element by a method wherein a polysilicon layer is formed on the semiconductor substrate on which an insulating film with two windows was formed and polysilicon electrodes are formed by ion implantation and diffusion. CONSTITUTION:An N type silicon oxide film 23 and a silicon nitride film 24 are formed on the N type silicon substrate 21 whereon a P type base region 22 was formed, and two windows 25a and 26a are provided on the silicon nitride film 24. Then, a window 26a is opened on the silicon oxide film 23, and a side base region 27 is formed by performing boron diffusion. After a window 25b has been opened on the silicon oxide film 23, a non-doped polysilicon layer 28 and a silicon nitride film 29 are formed. A window 25c is opened on the film 29, and N type impurities are injected in the polysilicon layer 28 using the film 29 as a mask. A heat treatment is performed and an emitter region 30 is formed by diffusing N type impurities, and at the same time, boron is diffused on the polysilicon layer 28 on the region 27 using the side base region 27 as a source of diffusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1747881A JPS57132357A (en) | 1981-02-10 | 1981-02-10 | Manufacture of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1747881A JPS57132357A (en) | 1981-02-10 | 1981-02-10 | Manufacture of semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57132357A true JPS57132357A (en) | 1982-08-16 |
Family
ID=11945107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1747881A Pending JPS57132357A (en) | 1981-02-10 | 1981-02-10 | Manufacture of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57132357A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60175451A (en) * | 1984-02-20 | 1985-09-09 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| WO2005067056A1 (en) * | 2004-01-09 | 2005-07-21 | Sony Corporation | Bipolar transistor, semiconductor device comprising the bipolar transistor and process for fabricating them |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51127682A (en) * | 1975-04-30 | 1976-11-06 | Fujitsu Ltd | Manufacturing process of semiconductor device |
| JPS5222483A (en) * | 1975-08-13 | 1977-02-19 | Fujitsu Ltd | Method of manufacturing semiconductor device |
| JPS5310979A (en) * | 1976-07-16 | 1978-01-31 | Mitsubishi Electric Corp | Semiconductor device and its production |
-
1981
- 1981-02-10 JP JP1747881A patent/JPS57132357A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51127682A (en) * | 1975-04-30 | 1976-11-06 | Fujitsu Ltd | Manufacturing process of semiconductor device |
| JPS5222483A (en) * | 1975-08-13 | 1977-02-19 | Fujitsu Ltd | Method of manufacturing semiconductor device |
| JPS5310979A (en) * | 1976-07-16 | 1978-01-31 | Mitsubishi Electric Corp | Semiconductor device and its production |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60175451A (en) * | 1984-02-20 | 1985-09-09 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| WO2005067056A1 (en) * | 2004-01-09 | 2005-07-21 | Sony Corporation | Bipolar transistor, semiconductor device comprising the bipolar transistor and process for fabricating them |
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