JPS6489463A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6489463A JPS6489463A JP24415387A JP24415387A JPS6489463A JP S6489463 A JPS6489463 A JP S6489463A JP 24415387 A JP24415387 A JP 24415387A JP 24415387 A JP24415387 A JP 24415387A JP S6489463 A JPS6489463 A JP S6489463A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- channel
- silicon substrate
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To manufacture a MIS type semiconductor device in few steps at the high yield rate by TAT in less steps, by performing ion implantation for forming a channel region and ion implantation for forming a channel stopper region by the same step by utilizing an oxidation resisting film. CONSTITUTION:An SiO2 film 12 is uniformly formed on one surface of a p-type silicon substrate including p-type impurities at a low concentration. Then, an Si3N4 film 13 is selectively formed at the upper part of a part, where a channel region is to be formed, on the SiO2 film 12. Thereafter, boron ions as p-type impurities are implanted. Then, thermal oxidation is performed. A thick SiO2 film 14 is formed on a part, which is not covered with the Si3N4 film. During the heat treatment, boron ions B1 and B2, which are implanted in the silicon substrate 11, are diffused in the silicon substrate. A channel region 15 is formed beneath the Si3N4 film 13, and a channel stopper region 16 is formed beneath the thick SiO2 film 14. Since the ion implantation for forming the channel region 15 and the channel stopper region 16 is performed in the same step, the manufacturing steps are simplified.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24415387A JPS6489463A (en) | 1987-09-30 | 1987-09-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24415387A JPS6489463A (en) | 1987-09-30 | 1987-09-30 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6489463A true JPS6489463A (en) | 1989-04-03 |
Family
ID=17114550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24415387A Pending JPS6489463A (en) | 1987-09-30 | 1987-09-30 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6489463A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5422301A (en) * | 1993-12-28 | 1995-06-06 | Fujitsu Limited | Method of manufacturing semiconductor device with MOSFET |
-
1987
- 1987-09-30 JP JP24415387A patent/JPS6489463A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5422301A (en) * | 1993-12-28 | 1995-06-06 | Fujitsu Limited | Method of manufacturing semiconductor device with MOSFET |
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