JPS5656682A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5656682A JPS5656682A JP13242679A JP13242679A JPS5656682A JP S5656682 A JPS5656682 A JP S5656682A JP 13242679 A JP13242679 A JP 13242679A JP 13242679 A JP13242679 A JP 13242679A JP S5656682 A JPS5656682 A JP S5656682A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layers
- opening
- type
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 239000010410 layer Substances 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
Abstract
PURPOSE:To obtain a high concentration by using a self-alignment method when an overflow drain region for preventing a blooming and a stopper region surrounding the drain region are formed in the cell of a solid picking-up device. CONSTITUTION:An SiO2 film 12 and an Si3N4 film 13 are laminated on and fitted to a P type Si substrate 10, an opening is made corresponding to the region where the overflow drain is to be formed, and a glass layer 14 containing P or As is formed on the whole surface. Next, heat treatment is applied in the ambience N2 to diffuse the impurities contained in the layer 14 into the surface layer part of the substrate 10 exposed in the opening and thereby N<+> type layers 15-1 and 15-2 are obtained. While the film 14 is removed by using NH4F, the end surface of the film 12 exposed in the opening is also removed. After that, the film 12 is formed to be the SiO2 films 19-1-19-3 through the oxidizing treatment, and simultaneously, thin SiO2 films 16-1-16-2 are produced on the layers 15-1 and 15-2 and the vicinity thereof, the remaining films 17-1-17-3 are removed, B ion is implanted, and thus P<+> type stopper layers 20-1, 20-1' and 20-2 and 20-2' are formed around the layers 15-1 and 15-2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13242679A JPS5656682A (en) | 1979-10-16 | 1979-10-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13242679A JPS5656682A (en) | 1979-10-16 | 1979-10-16 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5656682A true JPS5656682A (en) | 1981-05-18 |
Family
ID=15081092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13242679A Pending JPS5656682A (en) | 1979-10-16 | 1979-10-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5656682A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0069649A2 (en) * | 1981-07-10 | 1983-01-12 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof |
-
1979
- 1979-10-16 JP JP13242679A patent/JPS5656682A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0069649A2 (en) * | 1981-07-10 | 1983-01-12 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof |
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