JPS57107050A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57107050A
JPS57107050A JP18434380A JP18434380A JPS57107050A JP S57107050 A JPS57107050 A JP S57107050A JP 18434380 A JP18434380 A JP 18434380A JP 18434380 A JP18434380 A JP 18434380A JP S57107050 A JPS57107050 A JP S57107050A
Authority
JP
Japan
Prior art keywords
region
fet
film
poured
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18434380A
Other languages
Japanese (ja)
Inventor
Toshiaki Ogata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP18434380A priority Critical patent/JPS57107050A/en
Publication of JPS57107050A publication Critical patent/JPS57107050A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To prevent exerting of a kink effect on a non-channel type FET and to enable to perform a high-speed operation, by a method wherein, in a process to form an MOSFET being insulated for the separation into an insular configuration with a porous Si oxide, the formation of an element well takes place after a gate oxidized film is formed. CONSTITUTION:A nitrided film mask 14 is set at a surface of, for example, P type substrate 13, a B is poured to a separation region to form a P<+> layer, and simultaneously, a proton is poured to an element region 15 to form it into an N type. Then, after a porous Si is formed by an anode formation in a hydrofluoric acid solution in a manner to surround the region 15, the region 15 is brought to such a structure that, through the heat oxidation of the region 15, it is perfectly separated with an oxidized layer 16 in a manner to bring it to an insular configuration. Then, after a nitrided film 14 is removed to form a gate oxidized film, the B is introduced to the region 15 to form a P-well, and in turn, a process to manufacture an N-channel FET takes place. This permits the prevention of inversion at the active surface of the region 15 and the oxidized layer 16 due to the redistribution of the B, which results in permitting a kink effect to be prevented from being exerted on an FET property.
JP18434380A 1980-12-25 1980-12-25 Manufacture of semiconductor device Pending JPS57107050A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18434380A JPS57107050A (en) 1980-12-25 1980-12-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18434380A JPS57107050A (en) 1980-12-25 1980-12-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57107050A true JPS57107050A (en) 1982-07-03

Family

ID=16151621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18434380A Pending JPS57107050A (en) 1980-12-25 1980-12-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57107050A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0910124A2 (en) * 1997-10-16 1999-04-21 International Business Machines Corporation Semiconductor with lateral insulator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0910124A2 (en) * 1997-10-16 1999-04-21 International Business Machines Corporation Semiconductor with lateral insulator
EP0910124A3 (en) * 1997-10-16 2000-08-16 International Business Machines Corporation Semiconductor with lateral insulator

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