JPS5790960A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5790960A
JPS5790960A JP16584380A JP16584380A JPS5790960A JP S5790960 A JPS5790960 A JP S5790960A JP 16584380 A JP16584380 A JP 16584380A JP 16584380 A JP16584380 A JP 16584380A JP S5790960 A JPS5790960 A JP S5790960A
Authority
JP
Japan
Prior art keywords
oxide film
poly
substrate
material layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16584380A
Other languages
Japanese (ja)
Inventor
Hiroshi Nozawa
Junichi Matsunaga
Hisahiro Matsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16584380A priority Critical patent/JPS5790960A/en
Priority to DE8181305215T priority patent/DE3168688D1/en
Priority to EP81305215A priority patent/EP0051488B1/en
Priority to US06/317,616 priority patent/US4459325A/en
Publication of JPS5790960A publication Critical patent/JPS5790960A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To prevent the generation of a defect into a substrate by a separation oxidation process, and to improve reliability by forming a material layer, which is easy to be oxidized, such as poly Si onto the substrate through an oxide film, shaping an oxidation resisting mask to the upper section and selectively oxidizing the material layer. CONSTITUTION:The thermal oxide film 2 in approximately 1,000Angstrom thickness and the poly Si layer 3, into which phosphorus is doped in high concentration, in approximately 0.4mum are shaped onto the N type Si substrate 1, and a nitride film mask 4 (approximately 3,000Angstrom thickness) is formed onto an element forming region. The poly Si 3 of a field section is selectively oxidized and changed into an oxide film 5, the mask 4, the poly Si 3 and the oxide film 2 of the element region are successively etched and removed, the element region separated by the oxide film 5 is exposed, and an element such as a transistor is prepared. A silicide of Mo or W can be used as the material layer 3 selectively oxidized, and one part of the material layer 3 can be left as a shield layer through oxidation treatment. Accordingly, a lateral extent of the oxide layer 5 is decreased, a defect cannot be formed in the substrate, the characteristics of the element are improved, and yield and reliability can be ameliorated.
JP16584380A 1980-11-06 1980-11-27 Manufacture of semiconductor device Pending JPS5790960A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP16584380A JPS5790960A (en) 1980-11-27 1980-11-27 Manufacture of semiconductor device
DE8181305215T DE3168688D1 (en) 1980-11-06 1981-11-02 Method for manufacturing a semiconductor device
EP81305215A EP0051488B1 (en) 1980-11-06 1981-11-02 Method for manufacturing a semiconductor device
US06/317,616 US4459325A (en) 1980-11-06 1981-11-03 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16584380A JPS5790960A (en) 1980-11-27 1980-11-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5790960A true JPS5790960A (en) 1982-06-05

Family

ID=15820047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16584380A Pending JPS5790960A (en) 1980-11-06 1980-11-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5790960A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5189508A (en) * 1988-03-30 1993-02-23 Nippon Steel Corporation Silicon wafer excelling in gettering ability and method for production thereof
US5338750A (en) * 1992-11-27 1994-08-16 Industrial Technology Research Institute Fabrication method to produce pit-free polysilicon buffer local oxidation isolation
US5447885A (en) * 1993-10-25 1995-09-05 Samsung Electronics Co., Ltd. Isolation method of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5189508A (en) * 1988-03-30 1993-02-23 Nippon Steel Corporation Silicon wafer excelling in gettering ability and method for production thereof
US5338750A (en) * 1992-11-27 1994-08-16 Industrial Technology Research Institute Fabrication method to produce pit-free polysilicon buffer local oxidation isolation
US5447885A (en) * 1993-10-25 1995-09-05 Samsung Electronics Co., Ltd. Isolation method of semiconductor device

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