JPS55132053A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55132053A
JPS55132053A JP3854979A JP3854979A JPS55132053A JP S55132053 A JPS55132053 A JP S55132053A JP 3854979 A JP3854979 A JP 3854979A JP 3854979 A JP3854979 A JP 3854979A JP S55132053 A JPS55132053 A JP S55132053A
Authority
JP
Japan
Prior art keywords
layer
selectively
ion
implanted
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3854979A
Other languages
Japanese (ja)
Inventor
Satoshi Shinozaki
Akiyoshi Omichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP3854979A priority Critical patent/JPS55132053A/en
Publication of JPS55132053A publication Critical patent/JPS55132053A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a high-integrated device with high yield through a simplified process by a method wherein an epitaxial layer on a p-type Si is isolated to an island region having a buried oxidized film partly, B-ion is implated therein, an As-added polycrystalline-Si is accumulated selectively, and B and As are subjected to thermal diffusion. CONSTITUTION:An n-epitaxial layer 43 is formed on a p<->-type Si substrate 41 is which an n<+>-layer 42 is buried selectively. A double layer of SiO245 and Si3N446 is formed selectively, B-ion is then implanted by means of a resist mask to form a p<+>-isolated layer 44, and a buried oxidized film 47 is formed consecutively through wet oxidation. An opening is provided on a collector layer and an n<+>-layer 48 is formed through P-diffusion. Next, B-ion is implanted on the overall surface and a p-type internal base 49 is formed through thermal diffusion. Then, the layers 46, 45 are removed, an As-added polycrystalline-Si 50 is accumulated selectively, oxidized films 511, 522 are formed at low temperature, B-ion is then implanted to heat treatment, and thus a p<+>-type external base 52 and an n<+>-emitter 53 are formed. A window is provided selectively and an electrode is applied finally. According to this method, the emitter area can be limited, and the emitter base short circuit can be prevented, thus ensuring a high integration at high yield.
JP3854979A 1979-03-31 1979-03-31 Manufacture of semiconductor device Pending JPS55132053A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3854979A JPS55132053A (en) 1979-03-31 1979-03-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3854979A JPS55132053A (en) 1979-03-31 1979-03-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55132053A true JPS55132053A (en) 1980-10-14

Family

ID=12528363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3854979A Pending JPS55132053A (en) 1979-03-31 1979-03-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55132053A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59144167A (en) * 1983-02-07 1984-08-18 Hitachi Ltd Semiconductor resistance device
JPS60147154A (en) * 1983-12-29 1985-08-03 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション Resistance structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59144167A (en) * 1983-02-07 1984-08-18 Hitachi Ltd Semiconductor resistance device
JPS60147154A (en) * 1983-12-29 1985-08-03 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション Resistance structure
JPH0531307B2 (en) * 1983-12-29 1993-05-12 Intaanashonaru Bijinesu Mashiinzu Corp

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