JPS6427265A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6427265A
JPS6427265A JP18390887A JP18390887A JPS6427265A JP S6427265 A JPS6427265 A JP S6427265A JP 18390887 A JP18390887 A JP 18390887A JP 18390887 A JP18390887 A JP 18390887A JP S6427265 A JPS6427265 A JP S6427265A
Authority
JP
Japan
Prior art keywords
insulating film
opening section
contact
base region
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18390887A
Other languages
Japanese (ja)
Inventor
Isao Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP18390887A priority Critical patent/JPS6427265A/en
Publication of JPS6427265A publication Critical patent/JPS6427265A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve yield on manufacture by a method wherein a base region and an insulating film are formed onto a semiconductor substrate, a mask with first and second opening sections is shaped onto the insulating film, the ions of an impurity are implanted obliquely, the insulating film is etched and an emitter contact and a base contact are formed. CONSTITUTION:A p<-> type base region 12 and an insulating film 13 are formed onto an n<-> type epitaxial layer 11 constituting a semiconductor substrate in succession. A photo-resist film 14 is shaped onto the insulating film 13 and patterned, and a first opening section 15 for an emitter contact and a second opening section 16 for a base contact are formed. Boron ions 17 are implanted to the semiconductor substrate from the direction opposite to the first opening section 15 to the second opening section 16, using the photo-resist film 14 as a mask, and a p<+> type graft base region 18 is shaped into the base region 12. The insulating film 13 is etched, employing the photo-resist film 14 as a mask, thus forming an emitter contact 15A and a base contact 16A. Accordingly, the yield in manufacture can be improved.
JP18390887A 1987-07-22 1987-07-22 Manufacture of semiconductor device Pending JPS6427265A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18390887A JPS6427265A (en) 1987-07-22 1987-07-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18390887A JPS6427265A (en) 1987-07-22 1987-07-22 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6427265A true JPS6427265A (en) 1989-01-30

Family

ID=16143919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18390887A Pending JPS6427265A (en) 1987-07-22 1987-07-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6427265A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5207327A (en) * 1990-12-19 1993-05-04 Maxtor Corporation Foldable packaging cushion for protecting items

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5207327A (en) * 1990-12-19 1993-05-04 Maxtor Corporation Foldable packaging cushion for protecting items

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