JPS6427265A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6427265A JPS6427265A JP18390887A JP18390887A JPS6427265A JP S6427265 A JPS6427265 A JP S6427265A JP 18390887 A JP18390887 A JP 18390887A JP 18390887 A JP18390887 A JP 18390887A JP S6427265 A JPS6427265 A JP S6427265A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- opening section
- contact
- base region
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To improve yield on manufacture by a method wherein a base region and an insulating film are formed onto a semiconductor substrate, a mask with first and second opening sections is shaped onto the insulating film, the ions of an impurity are implanted obliquely, the insulating film is etched and an emitter contact and a base contact are formed. CONSTITUTION:A p<-> type base region 12 and an insulating film 13 are formed onto an n<-> type epitaxial layer 11 constituting a semiconductor substrate in succession. A photo-resist film 14 is shaped onto the insulating film 13 and patterned, and a first opening section 15 for an emitter contact and a second opening section 16 for a base contact are formed. Boron ions 17 are implanted to the semiconductor substrate from the direction opposite to the first opening section 15 to the second opening section 16, using the photo-resist film 14 as a mask, and a p<+> type graft base region 18 is shaped into the base region 12. The insulating film 13 is etched, employing the photo-resist film 14 as a mask, thus forming an emitter contact 15A and a base contact 16A. Accordingly, the yield in manufacture can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18390887A JPS6427265A (en) | 1987-07-22 | 1987-07-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18390887A JPS6427265A (en) | 1987-07-22 | 1987-07-22 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6427265A true JPS6427265A (en) | 1989-01-30 |
Family
ID=16143919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18390887A Pending JPS6427265A (en) | 1987-07-22 | 1987-07-22 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6427265A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5207327A (en) * | 1990-12-19 | 1993-05-04 | Maxtor Corporation | Foldable packaging cushion for protecting items |
-
1987
- 1987-07-22 JP JP18390887A patent/JPS6427265A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5207327A (en) * | 1990-12-19 | 1993-05-04 | Maxtor Corporation | Foldable packaging cushion for protecting items |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57139965A (en) | Manufacture of semiconductor device | |
JPS647664A (en) | Manufacture of field-effect transistor | |
JPS6427265A (en) | Manufacture of semiconductor device | |
JPS6484659A (en) | Manufacture of semiconductor device | |
JPS572519A (en) | Manufacture of semiconductor device | |
JPS5676571A (en) | Mos field effect transistor and manufacture thereof | |
JPS57173956A (en) | Manufacture of semiconductor device | |
JPS6482668A (en) | Manufacture of bipolar transistor | |
JPS5660015A (en) | Manufacture of semiconductor device | |
JPS5443683A (en) | Production of transistor | |
JPS55132053A (en) | Manufacture of semiconductor device | |
JPS5559775A (en) | Method of fabricating semiconductor device | |
JPS6484662A (en) | Manufacture of semiconductor device | |
JPS5710246A (en) | Manufacture of semiconductor device | |
JPS57106068A (en) | Manufacture of semiconductor device | |
JPS6490563A (en) | Semiconductor device and manufacture thereof | |
JPS57143862A (en) | Manufacture of semiconductor integrated circuit | |
JPS56104470A (en) | Semiconductor device and manufacture thereof | |
JPS5217768A (en) | Production method of semi-conductor device | |
JPS57157541A (en) | Manufacture of semiconductor device | |
JPS6425472A (en) | Manufacture of semiconductor device | |
JPS5713759A (en) | Manufacture of semiconductor device | |
JPS57113284A (en) | Manufacture of semiconductor device | |
JPS5529187A (en) | Production of semiconductor device | |
JPS647566A (en) | Manufacture of thin film transistor |