JPS6490563A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS6490563A JPS6490563A JP24844687A JP24844687A JPS6490563A JP S6490563 A JPS6490563 A JP S6490563A JP 24844687 A JP24844687 A JP 24844687A JP 24844687 A JP24844687 A JP 24844687A JP S6490563 A JPS6490563 A JP S6490563A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- layer
- etched
- photoresist
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To form a submicron pattern without increasing gate resistance, and to improve reliability by forming a gate electrode into a reverse-tapered shape or an overhang shape in which its lower section is narrower than its upper section. CONSTITUTION:A gate photoresist pattern 3 for shaping a reverse taper-shaped gate is formed onto a wafer, in which an epitaxial layer 2 is grown on a substrate 1, by using a photoresist. A source electrode 4, a drain electrode 5, a metallic layer 6 and a glass layer 7 are shaped. The resist 8 is applied, and the glass layer 7 is exposed through etching. The glass layer 7 is etched, the metallic layer 6 is etched, and the resist pattern 3 is removed. The epitaxial layer 2 is light-etched, a gate metal 9 is evaporated, and the photoresist is gotten rid of.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62248446A JP2550608B2 (en) | 1987-10-01 | 1987-10-01 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62248446A JP2550608B2 (en) | 1987-10-01 | 1987-10-01 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6490563A true JPS6490563A (en) | 1989-04-07 |
JP2550608B2 JP2550608B2 (en) | 1996-11-06 |
Family
ID=17178252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62248446A Expired - Lifetime JP2550608B2 (en) | 1987-10-01 | 1987-10-01 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2550608B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0855863A (en) * | 1994-08-15 | 1996-02-27 | Nec Corp | Manufacture of field-effect semiconductor device |
US6294446B1 (en) | 1996-04-04 | 2001-09-25 | Honda Giken Kogyo Kabushiki Kaisha | Methods of manufacturing a high electron mobility transistor with a T-shaped gate electrode |
-
1987
- 1987-10-01 JP JP62248446A patent/JP2550608B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0855863A (en) * | 1994-08-15 | 1996-02-27 | Nec Corp | Manufacture of field-effect semiconductor device |
US6294446B1 (en) | 1996-04-04 | 2001-09-25 | Honda Giken Kogyo Kabushiki Kaisha | Methods of manufacturing a high electron mobility transistor with a T-shaped gate electrode |
Also Published As
Publication number | Publication date |
---|---|
JP2550608B2 (en) | 1996-11-06 |
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