JPS6490563A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6490563A
JPS6490563A JP24844687A JP24844687A JPS6490563A JP S6490563 A JPS6490563 A JP S6490563A JP 24844687 A JP24844687 A JP 24844687A JP 24844687 A JP24844687 A JP 24844687A JP S6490563 A JPS6490563 A JP S6490563A
Authority
JP
Japan
Prior art keywords
gate
layer
etched
photoresist
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24844687A
Other languages
Japanese (ja)
Other versions
JP2550608B2 (en
Inventor
Masao Sumiyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62248446A priority Critical patent/JP2550608B2/en
Publication of JPS6490563A publication Critical patent/JPS6490563A/en
Application granted granted Critical
Publication of JP2550608B2 publication Critical patent/JP2550608B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To form a submicron pattern without increasing gate resistance, and to improve reliability by forming a gate electrode into a reverse-tapered shape or an overhang shape in which its lower section is narrower than its upper section. CONSTITUTION:A gate photoresist pattern 3 for shaping a reverse taper-shaped gate is formed onto a wafer, in which an epitaxial layer 2 is grown on a substrate 1, by using a photoresist. A source electrode 4, a drain electrode 5, a metallic layer 6 and a glass layer 7 are shaped. The resist 8 is applied, and the glass layer 7 is exposed through etching. The glass layer 7 is etched, the metallic layer 6 is etched, and the resist pattern 3 is removed. The epitaxial layer 2 is light-etched, a gate metal 9 is evaporated, and the photoresist is gotten rid of.
JP62248446A 1987-10-01 1987-10-01 Method for manufacturing semiconductor device Expired - Lifetime JP2550608B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62248446A JP2550608B2 (en) 1987-10-01 1987-10-01 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62248446A JP2550608B2 (en) 1987-10-01 1987-10-01 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6490563A true JPS6490563A (en) 1989-04-07
JP2550608B2 JP2550608B2 (en) 1996-11-06

Family

ID=17178252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62248446A Expired - Lifetime JP2550608B2 (en) 1987-10-01 1987-10-01 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP2550608B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0855863A (en) * 1994-08-15 1996-02-27 Nec Corp Manufacture of field-effect semiconductor device
US6294446B1 (en) 1996-04-04 2001-09-25 Honda Giken Kogyo Kabushiki Kaisha Methods of manufacturing a high electron mobility transistor with a T-shaped gate electrode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0855863A (en) * 1994-08-15 1996-02-27 Nec Corp Manufacture of field-effect semiconductor device
US6294446B1 (en) 1996-04-04 2001-09-25 Honda Giken Kogyo Kabushiki Kaisha Methods of manufacturing a high electron mobility transistor with a T-shaped gate electrode

Also Published As

Publication number Publication date
JP2550608B2 (en) 1996-11-06

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