JPS57136374A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57136374A
JPS57136374A JP2283881A JP2283881A JPS57136374A JP S57136374 A JPS57136374 A JP S57136374A JP 2283881 A JP2283881 A JP 2283881A JP 2283881 A JP2283881 A JP 2283881A JP S57136374 A JPS57136374 A JP S57136374A
Authority
JP
Japan
Prior art keywords
recessed region
conductive layer
mask
substrate
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2283881A
Other languages
Japanese (ja)
Inventor
Tsuneyoshi Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2283881A priority Critical patent/JPS57136374A/en
Publication of JPS57136374A publication Critical patent/JPS57136374A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To form a conductive layer precisely at a desired position within a recessed region by a method wherein using a mask of a resist layer which is provided selectively on a conductive layer on a substrate having a recessed region, the conductive layer is undercut by etching. CONSTITUTION:All over the surface of a GaAs substrate 11 on which a recessed region 14 is formed, a gate metal 17 of Al is evaporated. Using a photo resist 12 provided selectively on it as a mask, by undercutting the gate metal 17 by etching to be wider than an opening 18, 19 on the resist layer 12, a gate electrode 17' is formed in the recessed region 14. At the opening region in the resist layer 12 source and drain electrodes 20', 20'' are formed by evaporation. By this method each electrode can be formed by one mask, and necessity of adjusting masks is eliminated, and in addition the conductive layer can be formed with a simple process and a good precision in a recessed region on the substrate.
JP2283881A 1981-02-18 1981-02-18 Manufacture of semiconductor device Pending JPS57136374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2283881A JPS57136374A (en) 1981-02-18 1981-02-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2283881A JPS57136374A (en) 1981-02-18 1981-02-18 Manufacture of semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP22780587A Division JPS6393162A (en) 1987-09-11 1987-09-11 Formation of pattern

Publications (1)

Publication Number Publication Date
JPS57136374A true JPS57136374A (en) 1982-08-23

Family

ID=12093840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2283881A Pending JPS57136374A (en) 1981-02-18 1981-02-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57136374A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5039880A (en) * 1973-08-13 1975-04-12
JPS54882A (en) * 1977-06-03 1979-01-06 Fujitsu Ltd Manufacture of field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5039880A (en) * 1973-08-13 1975-04-12
JPS54882A (en) * 1977-06-03 1979-01-06 Fujitsu Ltd Manufacture of field effect transistor

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