JPS5673474A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5673474A
JPS5673474A JP15044479A JP15044479A JPS5673474A JP S5673474 A JPS5673474 A JP S5673474A JP 15044479 A JP15044479 A JP 15044479A JP 15044479 A JP15044479 A JP 15044479A JP S5673474 A JPS5673474 A JP S5673474A
Authority
JP
Japan
Prior art keywords
film
walls
layer
evaporated
selectively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15044479A
Other languages
Japanese (ja)
Other versions
JPS6161550B2 (en
Inventor
Kenichi Kikuchi
Shunji Otani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP15044479A priority Critical patent/JPS5673474A/en
Priority to US06/206,215 priority patent/US4377899A/en
Priority to DE19803043289 priority patent/DE3043289A1/en
Priority to FR8024416A priority patent/FR2474761B1/en
Publication of JPS5673474A publication Critical patent/JPS5673474A/en
Publication of JPS6161550B2 publication Critical patent/JPS6161550B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a Schottky barrier FET with short gate length by a method wherein two walls consisting of two layers of an insulating film and a resist are formed at both sides of a region where electrode metal is selectively coated when a semiconductor substrate is covered with the metal selectively, and the metal is evaporated from a clearance between the walls. CONSTITUTION:An N type GaAs working layer 7 is gaseous-phase epitaxial-grown on a semi-insulating GaAs substrate 6, mesa-etched and formed in a fixed shape, and the whole surface containing the layer 7 is coated with an SiO2 film 8. A pattern of two photoresist films 9, 10 is made up on the film 8 at an interval, the film 8 is removed by means of etching using the pattern as a mask, and two walls 11, 12 consisting of both a film 8a and a film 9 and both a film 8b and a film 10 are built up. An AuGeNi group alloy is evaporated from the oblique direction using the walls as masks, source and drain electrodes 13, 14 are selectively made up on the layer 7, the alloy attached on the surfaces of the walls 11, 12 is removed, and Al is evaporated onto the exposing layer 7 from the vertical direction during that time, thus forming a Schottky gate electrode 15.
JP15044479A 1979-11-19 1979-11-20 Manufacture of semiconductor device Granted JPS5673474A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP15044479A JPS5673474A (en) 1979-11-20 1979-11-20 Manufacture of semiconductor device
US06/206,215 US4377899A (en) 1979-11-19 1980-11-12 Method of manufacturing Schottky field-effect transistors utilizing shadow masking
DE19803043289 DE3043289A1 (en) 1979-11-19 1980-11-17 MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE
FR8024416A FR2474761B1 (en) 1979-11-19 1980-11-18 METHOD FOR MANUFACTURING SCHOTTKY BARRIER FIELD-EFFECT TRANSISTORS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15044479A JPS5673474A (en) 1979-11-20 1979-11-20 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5673474A true JPS5673474A (en) 1981-06-18
JPS6161550B2 JPS6161550B2 (en) 1986-12-26

Family

ID=15497061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15044479A Granted JPS5673474A (en) 1979-11-19 1979-11-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5673474A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61177781A (en) * 1985-02-02 1986-08-09 Sony Corp Field effect transistor
JPS61280672A (en) * 1985-05-20 1986-12-11 Sanyo Electric Co Ltd Manufacture of compound semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61177781A (en) * 1985-02-02 1986-08-09 Sony Corp Field effect transistor
JPS61280672A (en) * 1985-05-20 1986-12-11 Sanyo Electric Co Ltd Manufacture of compound semiconductor device

Also Published As

Publication number Publication date
JPS6161550B2 (en) 1986-12-26

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