JPS5676577A - Gaas schottky gate field effect transistor - Google Patents

Gaas schottky gate field effect transistor

Info

Publication number
JPS5676577A
JPS5676577A JP15476979A JP15476979A JPS5676577A JP S5676577 A JPS5676577 A JP S5676577A JP 15476979 A JP15476979 A JP 15476979A JP 15476979 A JP15476979 A JP 15476979A JP S5676577 A JPS5676577 A JP S5676577A
Authority
JP
Japan
Prior art keywords
layer
field effect
effect transistor
type
operation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15476979A
Other languages
Japanese (ja)
Inventor
Kenichi Kikuchi
Hideki Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP15476979A priority Critical patent/JPS5676577A/en
Publication of JPS5676577A publication Critical patent/JPS5676577A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a preferable high frequency characteristics in a field effect transistor by forming source and drain electrodes making contact with N type GaAs operation layer through a groove reaching the N type operation layer at the bottom of V-shape in cross section on a GaAlAs layer, thereby shortening the effective gate length. CONSTITUTION:N type GaAs operation layer 7 is epitaxially grown, for example, with a thickness of 0.6mum and 1X10<17>cm<-3> of carrier density on a semi-insulating GaAs substrate 6. Then, N type GaAlAs layer 8 is epitaxially grown, for example, with a thickness of 0.6mum and 1l10<15>cm<-3> of carrier density on the layer 7. Then, with a photoresist 9 as a mask the layer 8 is etched, thereby forming a V-shaped groove 10 reaching the layer 7 at the bottom and exposing the operation layer 11. Subsequently, Schottky gate metal, such as, for example, Al, Ti or the like is evaporated in multilayer on the entire surface of the wafer. Then, the resist 9 is removed, and a gate electrode 13 is formed thereon by shift off. In this case, the effective gate length between the layer 7 and the electrode 13 is formed to approx. 0.3mum in the junction. Then, the source 14 and drain 15 are formed for electrodes.
JP15476979A 1979-11-28 1979-11-28 Gaas schottky gate field effect transistor Pending JPS5676577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15476979A JPS5676577A (en) 1979-11-28 1979-11-28 Gaas schottky gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15476979A JPS5676577A (en) 1979-11-28 1979-11-28 Gaas schottky gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS5676577A true JPS5676577A (en) 1981-06-24

Family

ID=15591483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15476979A Pending JPS5676577A (en) 1979-11-28 1979-11-28 Gaas schottky gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS5676577A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763862A (en) * 1980-10-03 1982-04-17 Mitsubishi Electric Corp Preparation of gaas fet
JPS5763863A (en) * 1980-10-03 1982-04-17 Mitsubishi Electric Corp Preparatio of semiconductor device
JPS58143577A (en) * 1982-02-22 1983-08-26 Toshiba Corp Manufacture of buried gate field effect transistor
JPS6057979A (en) * 1983-09-09 1985-04-03 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS63271974A (en) * 1987-04-28 1988-11-09 Matsushita Electric Ind Co Ltd Manufacture of field-effect transistor
US4888626A (en) * 1985-03-07 1989-12-19 The United States Of America As Represented By The Secretary Of The Navy Self-aligned gaas fet with low 1/f noise

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5397784A (en) * 1977-02-07 1978-08-26 Hughes Aircraft Co Nonnactive gate gaaas fet transistor and method of producing same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5397784A (en) * 1977-02-07 1978-08-26 Hughes Aircraft Co Nonnactive gate gaaas fet transistor and method of producing same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763862A (en) * 1980-10-03 1982-04-17 Mitsubishi Electric Corp Preparation of gaas fet
JPS5763863A (en) * 1980-10-03 1982-04-17 Mitsubishi Electric Corp Preparatio of semiconductor device
JPS58143577A (en) * 1982-02-22 1983-08-26 Toshiba Corp Manufacture of buried gate field effect transistor
JPH0358177B2 (en) * 1982-02-22 1991-09-04 Tokyo Shibaura Electric Co
JPS6057979A (en) * 1983-09-09 1985-04-03 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
US4888626A (en) * 1985-03-07 1989-12-19 The United States Of America As Represented By The Secretary Of The Navy Self-aligned gaas fet with low 1/f noise
JPS63271974A (en) * 1987-04-28 1988-11-09 Matsushita Electric Ind Co Ltd Manufacture of field-effect transistor

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