JPS6489468A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6489468A
JPS6489468A JP24600487A JP24600487A JPS6489468A JP S6489468 A JPS6489468 A JP S6489468A JP 24600487 A JP24600487 A JP 24600487A JP 24600487 A JP24600487 A JP 24600487A JP S6489468 A JPS6489468 A JP S6489468A
Authority
JP
Japan
Prior art keywords
gate electrode
electrode pad
pad layer
make
mesfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24600487A
Other languages
Japanese (ja)
Inventor
Kazuya Nishibori
Atsushi Kameyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24600487A priority Critical patent/JPS6489468A/en
Publication of JPS6489468A publication Critical patent/JPS6489468A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To make high density integration of a MESFET possible by selectively arranging an electrode pad layer for a gate electrode on the gate electrode of an active layer of a MESFET in the longitudinal direction so as to make metal wiring contact with this electrode pad layer. CONSTITUTION:An n-type active layer 2 is formed by ion implantation of Si by using a semiinsulating GaAs substrate 1, thereafter, a gate electrode pad layer 5, which contacts metal wiring with a gate electrode 4 on the active layer 2 is pattern-formed, for instance, by a TiN film. Thereafter, a photoresist is pattern-formed so as to make a hole on an insulating film 71 in the source- drain electrode forming position for forming the ohmic electrodes 6, 61 an 62 of a source and a drain by a lift-off process. Later, the whole surface is coated with the insulating film so as to make contact holes on the ohmic electrode 6 and on a gate electrode pad layer 5 for forming Al wiring 8, 81-83. In this way, high integration of a MESFET is possible by arranging the gate electrode pad layer in an element region.
JP24600487A 1987-09-30 1987-09-30 Semiconductor device Pending JPS6489468A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24600487A JPS6489468A (en) 1987-09-30 1987-09-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24600487A JPS6489468A (en) 1987-09-30 1987-09-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6489468A true JPS6489468A (en) 1989-04-03

Family

ID=17142033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24600487A Pending JPS6489468A (en) 1987-09-30 1987-09-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6489468A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01165144A (en) * 1987-12-21 1989-06-29 Nec Ic Microcomput Syst Ltd Semiconductor device
KR100266381B1 (en) * 1996-10-28 2000-10-02 윤종용 Semiconductor memory device
JP2005340767A (en) * 2004-04-28 2005-12-08 Nippon Sheet Glass Co Ltd Electrode contact structure and its manufacturing method
US7709900B2 (en) 2004-07-22 2010-05-04 Panasonic Corporation Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01165144A (en) * 1987-12-21 1989-06-29 Nec Ic Microcomput Syst Ltd Semiconductor device
KR100266381B1 (en) * 1996-10-28 2000-10-02 윤종용 Semiconductor memory device
JP2005340767A (en) * 2004-04-28 2005-12-08 Nippon Sheet Glass Co Ltd Electrode contact structure and its manufacturing method
US7709900B2 (en) 2004-07-22 2010-05-04 Panasonic Corporation Semiconductor device

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