JPS6461065A - Field-effect transistor and manufacture thereof - Google Patents
Field-effect transistor and manufacture thereofInfo
- Publication number
- JPS6461065A JPS6461065A JP21944687A JP21944687A JPS6461065A JP S6461065 A JPS6461065 A JP S6461065A JP 21944687 A JP21944687 A JP 21944687A JP 21944687 A JP21944687 A JP 21944687A JP S6461065 A JPS6461065 A JP S6461065A
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- implanted
- silicon
- type gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To stably perform an FET having a high current driving capacity and a high speed with good reproducibility by providing an opposite conductivity type buried region to that of an active region in a semi-insulating gallium arsenide substrate in contact with the lower side of the active region under a drain electrode. CONSTITUTION:Silicon ions are implanted to the surface of a semi-insulating GaAs substrate 1, heat treated to form an n<-> type GaAs region 2, a silicon oxide film is removed, a tungsten silicide layer is deposited, and selectively anisotropically etched to form a gate electrode 3. Then, a silicon oxide film 4 is deposited on the surface, removed by anisotropically etching with the film 4 remaining only on the sidewall of the electrode 3, silicon is ion implanted to form an n<+> type GaAs region 5. Thereafter, after the film 4 is removed, a photoresist film 6 is formed, magnesium ions 10 are implanted to form a p-type GaAs region 7.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21944687A JPS6461065A (en) | 1987-09-01 | 1987-09-01 | Field-effect transistor and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21944687A JPS6461065A (en) | 1987-09-01 | 1987-09-01 | Field-effect transistor and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6461065A true JPS6461065A (en) | 1989-03-08 |
Family
ID=16735538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21944687A Pending JPS6461065A (en) | 1987-09-01 | 1987-09-01 | Field-effect transistor and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6461065A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000114276A (en) * | 1998-10-08 | 2000-04-21 | Oki Electric Ind Co Ltd | Manufacture of semiconductor element |
US10654617B2 (en) | 2015-04-29 | 2020-05-19 | Khs Gmbh | Container and method for producing a container of said type |
-
1987
- 1987-09-01 JP JP21944687A patent/JPS6461065A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000114276A (en) * | 1998-10-08 | 2000-04-21 | Oki Electric Ind Co Ltd | Manufacture of semiconductor element |
US10654617B2 (en) | 2015-04-29 | 2020-05-19 | Khs Gmbh | Container and method for producing a container of said type |
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