JPS6428870A - Manufacture of field-effect transistor - Google Patents

Manufacture of field-effect transistor

Info

Publication number
JPS6428870A
JPS6428870A JP18396287A JP18396287A JPS6428870A JP S6428870 A JPS6428870 A JP S6428870A JP 18396287 A JP18396287 A JP 18396287A JP 18396287 A JP18396287 A JP 18396287A JP S6428870 A JPS6428870 A JP S6428870A
Authority
JP
Japan
Prior art keywords
gate electrode
insulating film
metal layer
mask
asymmetric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18396287A
Other languages
Japanese (ja)
Inventor
Koji Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP18396287A priority Critical patent/JPS6428870A/en
Publication of JPS6428870A publication Critical patent/JPS6428870A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To make it possible to form easily a FET wherein the arrangement of a gate electrode is asymmetric, by forming an asymmetric insulating film on the side part of the gate electrode, and implanting ions into an active layer in a substrate by applying the insulating film and the gate electrode to a mask. CONSTITUTION:After an active layer 2 is formed in a semiconductor substrate 1, a gate electrode 3 is formed on the surface of the layer. An insulating film 4 and an Al metal layer 5 are formed on the substrate 1 and the gate electrode 3. The metal layer 5 is obliquely etched by utilizing a protrusion of the gate electrode, and a metal layer 5' is left only on the sidewall part of the above protrusion. The insulating film 4 is etched by applying the left metal layer 5' to a mask, and the asymmetric sidewalls 6A, 6B are formed on the side part of the gate 3. Ion is implanted by applying the sidewalls and the gate electrode to a mask, and ohmic layers 7s, 7d are formed, on the surface of which ohmic electrodes 8N, 9 for the source and drain are formed.
JP18396287A 1987-07-23 1987-07-23 Manufacture of field-effect transistor Pending JPS6428870A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18396287A JPS6428870A (en) 1987-07-23 1987-07-23 Manufacture of field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18396287A JPS6428870A (en) 1987-07-23 1987-07-23 Manufacture of field-effect transistor

Publications (1)

Publication Number Publication Date
JPS6428870A true JPS6428870A (en) 1989-01-31

Family

ID=16144867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18396287A Pending JPS6428870A (en) 1987-07-23 1987-07-23 Manufacture of field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6428870A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01259568A (en) * 1988-04-11 1989-10-17 Sumitomo Electric Ind Ltd Manufacture of field effect transistor
EP0598711A2 (en) * 1989-04-12 1994-05-25 Mitsubishi Denki Kabushiki Kaisha MESFET source/drain structure
JP2009118839A (en) * 2007-11-15 2009-06-04 Kiyoshi Eguchi Pond smelt fishing electric reel with centrifugal force rotation arm

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994826A (en) * 1982-11-22 1984-05-31 Fujitsu Ltd Manufacture of semiconductor device
JPS60776A (en) * 1983-05-19 1985-01-05 Nec Corp Manufacture of semiconductor device
JPS6276780A (en) * 1985-09-30 1987-04-08 Nec Corp Manufacture of semiconductor device
JPS62114275A (en) * 1985-11-13 1987-05-26 Sharp Corp Self-aligned filed effect transistor and manufacture thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994826A (en) * 1982-11-22 1984-05-31 Fujitsu Ltd Manufacture of semiconductor device
JPS60776A (en) * 1983-05-19 1985-01-05 Nec Corp Manufacture of semiconductor device
JPS6276780A (en) * 1985-09-30 1987-04-08 Nec Corp Manufacture of semiconductor device
JPS62114275A (en) * 1985-11-13 1987-05-26 Sharp Corp Self-aligned filed effect transistor and manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01259568A (en) * 1988-04-11 1989-10-17 Sumitomo Electric Ind Ltd Manufacture of field effect transistor
EP0598711A2 (en) * 1989-04-12 1994-05-25 Mitsubishi Denki Kabushiki Kaisha MESFET source/drain structure
EP0598711A3 (en) * 1989-04-12 1994-08-24 Mitsubishi Electric Corp Mesfet source/drain structure.
JP2009118839A (en) * 2007-11-15 2009-06-04 Kiyoshi Eguchi Pond smelt fishing electric reel with centrifugal force rotation arm

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