JPS57143866A - Insulating gate type field-effect transistor and its manufacture - Google Patents
Insulating gate type field-effect transistor and its manufactureInfo
- Publication number
- JPS57143866A JPS57143866A JP2822681A JP2822681A JPS57143866A JP S57143866 A JPS57143866 A JP S57143866A JP 2822681 A JP2822681 A JP 2822681A JP 2822681 A JP2822681 A JP 2822681A JP S57143866 A JPS57143866 A JP S57143866A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate oxide
- oxide film
- section
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To improve the saturation type characteristics of the drain currents of the MOSFET by projecting a source section to a section upper than a channel forming surface and contacting at least one part of the source section with the side surface of a gate insulating film. CONSTITUTION:The source region 3 formed onto an Si substrate 1 through the ion implantation method of As ions is projected to the section upper than the surface of a channel region shaped in the interface between the gate oxide film 4 and the substrate 1, and contacted partially with the side surface of the gate oxide film 4. The MOSFET is obtained in such a manner that a drain and the channel region section are removed through selective etching using an Si3N4 film on thin SiO2 12 as a protective film, the SiO2 film is removed, a gate oxide film 15 is shaped, polycrystal Si16 is evaporated and patterned onto the gate oxide film 15, and a source 17 and a drain region 18 are formed through the ion implantation of As. Accordingly, saturation current characteristics can be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2822681A JPS57143866A (en) | 1981-02-27 | 1981-02-27 | Insulating gate type field-effect transistor and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2822681A JPS57143866A (en) | 1981-02-27 | 1981-02-27 | Insulating gate type field-effect transistor and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57143866A true JPS57143866A (en) | 1982-09-06 |
Family
ID=12242687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2822681A Pending JPS57143866A (en) | 1981-02-27 | 1981-02-27 | Insulating gate type field-effect transistor and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57143866A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6215216B1 (en) | 1997-07-02 | 2001-04-10 | Mitsubishi Denki Kabushiki Kaisha | Vehicle alternator |
-
1981
- 1981-02-27 JP JP2822681A patent/JPS57143866A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6215216B1 (en) | 1997-07-02 | 2001-04-10 | Mitsubishi Denki Kabushiki Kaisha | Vehicle alternator |
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