JPS5648174A - Semiconductor device and its preparation - Google Patents
Semiconductor device and its preparationInfo
- Publication number
- JPS5648174A JPS5648174A JP12397179A JP12397179A JPS5648174A JP S5648174 A JPS5648174 A JP S5648174A JP 12397179 A JP12397179 A JP 12397179A JP 12397179 A JP12397179 A JP 12397179A JP S5648174 A JPS5648174 A JP S5648174A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- substrate
- regions
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 238000005266 casting Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain an FET of low wiring resistance and high speed self-matchingly by forming a gate electrode using Al when making an insulated gate type MISFET and then forming source and drain regions by ion implantation using the electrode as a mask. CONSTITUTION:On the periphery of a P type Si substrate 1, a thick field SiO2 film 4 is formed, and on the surface of the substrate 1 surrounded by the film 4, a thin gate SiO2 film 5 is coated, and on the film, an Al gate electrode 6 is formed with its one end extending onto the film 4. Next, implanting impurity ions 7 into the substrate 1 using the electrode as a mask, N type source and drain regions 8 and 9 are formed, and then casting laser beams 10 all over the surface, the regions 8 and 9 are activated. By so doing, annealing of the regions 8 and 9 becomes self-matching since the surface 11 of the electrode 6 reflects the laser beams 10 and desired characteristics can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12397179A JPS5648174A (en) | 1979-09-28 | 1979-09-28 | Semiconductor device and its preparation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12397179A JPS5648174A (en) | 1979-09-28 | 1979-09-28 | Semiconductor device and its preparation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5648174A true JPS5648174A (en) | 1981-05-01 |
Family
ID=14873839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12397179A Pending JPS5648174A (en) | 1979-09-28 | 1979-09-28 | Semiconductor device and its preparation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5648174A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4644637A (en) * | 1983-12-30 | 1987-02-24 | General Electric Company | Method of making an insulated-gate semiconductor device with improved shorting region |
| US4833097A (en) * | 1986-05-12 | 1989-05-23 | Butler Alan L | Fabrication of MOS-transistors |
-
1979
- 1979-09-28 JP JP12397179A patent/JPS5648174A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4644637A (en) * | 1983-12-30 | 1987-02-24 | General Electric Company | Method of making an insulated-gate semiconductor device with improved shorting region |
| US4833097A (en) * | 1986-05-12 | 1989-05-23 | Butler Alan L | Fabrication of MOS-transistors |
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