JPS57104258A - Metal oxide semiconductor - Google Patents

Metal oxide semiconductor

Info

Publication number
JPS57104258A
JPS57104258A JP18038180A JP18038180A JPS57104258A JP S57104258 A JPS57104258 A JP S57104258A JP 18038180 A JP18038180 A JP 18038180A JP 18038180 A JP18038180 A JP 18038180A JP S57104258 A JPS57104258 A JP S57104258A
Authority
JP
Japan
Prior art keywords
gate
shaped
impurity
concentration
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18038180A
Other languages
Japanese (ja)
Other versions
JPS6364909B2 (en
Inventor
Hideshi Ito
Kazutoshi Ashikawa
Tetsuo Iijima
Mitsuo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP18038180A priority Critical patent/JPS57104258A/en
Publication of JPS57104258A publication Critical patent/JPS57104258A/en
Publication of JPS6364909B2 publication Critical patent/JPS6364909B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate

Abstract

PURPOSE:To obtain a MOSFET having excellent output characteristics and high dielectric resistance by making higher the concentration of the P type impurity of a P<-> substrate under a gate, a source field plate and one part of an offset gate. CONSTITUTION:Acceptor impurity ions are implanted selectively into the P<-> type Si substrate 1b having the low concentration of the impurity, and a P<-> well 1a having slightly higher impurity concentration is formed. An N<-> type well 3a is shaped to a drain section through ion implantation. A SiO2 mask is removed, and a thin SiO2 film 4 for the gate is formed. A gate electrode 5 of a poly Si layer is shaped, the high dielectric resisting layer (the offset gate) 6 is molded through ion implantation, a CVD.SiO2 film 7 is formed, and an N<+> source region 2 and an N<+> drain region 3 are shaped. The source field plate 9 and an electrode are formed through the evaporation of Al and a selective etching process.
JP18038180A 1980-12-22 1980-12-22 Metal oxide semiconductor Granted JPS57104258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18038180A JPS57104258A (en) 1980-12-22 1980-12-22 Metal oxide semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18038180A JPS57104258A (en) 1980-12-22 1980-12-22 Metal oxide semiconductor

Publications (2)

Publication Number Publication Date
JPS57104258A true JPS57104258A (en) 1982-06-29
JPS6364909B2 JPS6364909B2 (en) 1988-12-14

Family

ID=16082234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18038180A Granted JPS57104258A (en) 1980-12-22 1980-12-22 Metal oxide semiconductor

Country Status (1)

Country Link
JP (1) JPS57104258A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01162372A (en) * 1987-12-18 1989-06-26 Matsushita Electron Corp Mis transistor
JPH03227572A (en) * 1989-07-04 1991-10-08 Fuji Electric Co Ltd Mos semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01162372A (en) * 1987-12-18 1989-06-26 Matsushita Electron Corp Mis transistor
JPH03227572A (en) * 1989-07-04 1991-10-08 Fuji Electric Co Ltd Mos semiconductor device

Also Published As

Publication number Publication date
JPS6364909B2 (en) 1988-12-14

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