JPS57106169A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57106169A
JPS57106169A JP18346180A JP18346180A JPS57106169A JP S57106169 A JPS57106169 A JP S57106169A JP 18346180 A JP18346180 A JP 18346180A JP 18346180 A JP18346180 A JP 18346180A JP S57106169 A JPS57106169 A JP S57106169A
Authority
JP
Japan
Prior art keywords
polysilicon
gate
drain
section
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18346180A
Other languages
Japanese (ja)
Inventor
Kazunari Shirai
Izumi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18346180A priority Critical patent/JPS57106169A/en
Publication of JPS57106169A publication Critical patent/JPS57106169A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To increase dielectric resistance between a source and a drain by forming sections among a gate and the source and drain in offset structure by using the processes of reactive etching, which leaves polysilicon in a gate edge section, and ion implantation. CONSTITUTION:A gate oxide film 3 and a polysilicon gate electrode 4 are shaped to a silicon semiconductor substrate 1. An oxide film 5 is formed through thermal oxidiation. Polysilicon is grown under decompression. The polysilicon grows in the gate edge section in thickness larger than a flat section. The whole surface is etched through the reactive etching, the polysilicon of the flat section is removed, and the polysilicon 6' is left in the gate edge section. Ions are implanted in order to form the source and drain, and an N<+> region 2 is shaped. An N<-> region 2' is molded to an offset section by using the ion implantation method as necessary.
JP18346180A 1980-12-24 1980-12-24 Manufacture of semiconductor device Pending JPS57106169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18346180A JPS57106169A (en) 1980-12-24 1980-12-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18346180A JPS57106169A (en) 1980-12-24 1980-12-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57106169A true JPS57106169A (en) 1982-07-01

Family

ID=16136178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18346180A Pending JPS57106169A (en) 1980-12-24 1980-12-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57106169A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952878A (en) * 1982-09-20 1984-03-27 Fujitsu Ltd Manufacture of semiconductor device
JPS5972759A (en) * 1982-10-20 1984-04-24 Toshiba Corp Semiconductor device and manufacture thereof
JPH0316141A (en) * 1990-05-17 1991-01-24 Toshiba Corp Semiconductor device
JPH05190845A (en) * 1992-07-23 1993-07-30 Hitachi Ltd Mis-type field-effect transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444481A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444481A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952878A (en) * 1982-09-20 1984-03-27 Fujitsu Ltd Manufacture of semiconductor device
JPH0481327B2 (en) * 1982-09-20 1992-12-22 Fujitsu Ltd
JPS5972759A (en) * 1982-10-20 1984-04-24 Toshiba Corp Semiconductor device and manufacture thereof
JPH05865B2 (en) * 1982-10-20 1993-01-06 Tokyo Shibaura Electric Co
JPH0316141A (en) * 1990-05-17 1991-01-24 Toshiba Corp Semiconductor device
JPH05190845A (en) * 1992-07-23 1993-07-30 Hitachi Ltd Mis-type field-effect transistor

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