JPS57202783A - Manufacture of insulated gate type field-effect transistor - Google Patents
Manufacture of insulated gate type field-effect transistorInfo
- Publication number
- JPS57202783A JPS57202783A JP8778981A JP8778981A JPS57202783A JP S57202783 A JPS57202783 A JP S57202783A JP 8778981 A JP8778981 A JP 8778981A JP 8778981 A JP8778981 A JP 8778981A JP S57202783 A JPS57202783 A JP S57202783A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- substrate
- gate electrode
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 229910000457 iridium oxide Inorganic materials 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To prevent the breakdown of the gate electrode and the gate insulating film of the titled transistor by a method wherein an impurity ion is implanted on a semiconductor substrate using a gate electrode, which is provided through the intermediary of a gate insulating film, as a mask and when source and drain regions are formed in a substrate, a conductive film is coated on the whole surface and the impurity ion is implanted through the conductive film. CONSTITUTION:A thick SiO2 film 2 to be used for isolation is formed on the circumferential part of a semiconductor substrate 1, and a thin gate insulating film 3 is coated on the substrate which is surrounded by the film 2. Then, a polycrystalline Si layer, which will be turned to a gate electrode, is deposited on the film 3, and a gate electrode 6 is formed by performing an etching on the Si layer using the photoresist film 5 as a mask. Then, with the film 5 left over, a source and drain region 7 is formed in the substrate 1 located on both sides of the electrode 6 by performing an ion implantation through a conductive iridium oxide film 8 which is coated on the whole surface. Through these procedures, no electric charge is accumulated on the electrode 6 and the film 5 and also no discharge phenomenon is generated, thereby enabling to prevent the breakdown of the electrode 6 and the film 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8778981A JPS57202783A (en) | 1981-06-05 | 1981-06-05 | Manufacture of insulated gate type field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8778981A JPS57202783A (en) | 1981-06-05 | 1981-06-05 | Manufacture of insulated gate type field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57202783A true JPS57202783A (en) | 1982-12-11 |
Family
ID=13924742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8778981A Pending JPS57202783A (en) | 1981-06-05 | 1981-06-05 | Manufacture of insulated gate type field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57202783A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61295627A (en) * | 1985-06-24 | 1986-12-26 | Nec Kansai Ltd | Ion implantation method |
| JPH02159041A (en) * | 1988-12-13 | 1990-06-19 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1981
- 1981-06-05 JP JP8778981A patent/JPS57202783A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61295627A (en) * | 1985-06-24 | 1986-12-26 | Nec Kansai Ltd | Ion implantation method |
| JPH02159041A (en) * | 1988-12-13 | 1990-06-19 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
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