JPS5775463A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5775463A
JPS5775463A JP15125880A JP15125880A JPS5775463A JP S5775463 A JPS5775463 A JP S5775463A JP 15125880 A JP15125880 A JP 15125880A JP 15125880 A JP15125880 A JP 15125880A JP S5775463 A JPS5775463 A JP S5775463A
Authority
JP
Japan
Prior art keywords
layer
ion implantation
source
conductive
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15125880A
Other languages
Japanese (ja)
Other versions
JPH033388B2 (en
Inventor
Kunio Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15125880A priority Critical patent/JPS5775463A/en
Publication of JPS5775463A publication Critical patent/JPS5775463A/en
Publication of JPH033388B2 publication Critical patent/JPH033388B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To prevent the breakdown of a gate insulating film due to ion implantation by forming source and drain regions under the state the uppermost layer on a semiconductor substrate is covered by a conductive film by ion implantation method. CONSTITUTION:A poly crystal Si film 3 is deposited on the entire surface of the Si substrate 1, and conductive impurities are doped. Then a gate electrode is formed. In this case, a thin layer of the poly crystal Si is left at the part other than the gate electrode, by stopping the etching before the final point is reached. Then an ion beam 4 is irradiated, and a source and drain diffused layer 5 is formed. In this injection, the thin surface layer 3 and a conductive wafer supporting substrate 8 are shorted. In this method, the breakdown of the gate insulating film does not occur, and the ion implantation to the source and drain layer can be performed.
JP15125880A 1980-10-28 1980-10-28 Manufacture of semiconductor device Granted JPS5775463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15125880A JPS5775463A (en) 1980-10-28 1980-10-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15125880A JPS5775463A (en) 1980-10-28 1980-10-28 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5775463A true JPS5775463A (en) 1982-05-12
JPH033388B2 JPH033388B2 (en) 1991-01-18

Family

ID=15514724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15125880A Granted JPS5775463A (en) 1980-10-28 1980-10-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5775463A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS594070A (en) * 1982-06-30 1984-01-10 Toshiba Corp Semiconductor memory device and manufacture thereof
JPS5994454A (en) * 1982-11-19 1984-05-31 Nec Kyushu Ltd Semiconductor device and manufacture thereof
JPS5994450A (en) * 1982-11-19 1984-05-31 Nec Kyushu Ltd Semiconductor device
JPS59104173A (en) * 1982-12-07 1984-06-15 Seiko Epson Corp Manufacture of thin film semiconductor device
JPS59105356A (en) * 1982-12-07 1984-06-18 Seiko Epson Corp Manufacture of matrix array
JPS60116128A (en) * 1983-11-29 1985-06-22 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
US4543597A (en) * 1982-06-30 1985-09-24 Tokyo Shibaura Denki Kabushiki Kaisha Dynamic semiconductor memory and manufacturing method thereof
JPS61231753A (en) * 1985-04-08 1986-10-16 Nec Corp Mis-type dynamic random access memory device
JPS61295627A (en) * 1985-06-24 1986-12-26 Nec Kansai Ltd Ion implantation method
JPS62248223A (en) * 1986-04-21 1987-10-29 Sumitomo Eaton Noba Kk Charging-preventive method for wafer
JPS6350014A (en) * 1986-08-19 1988-03-02 Nec Corp Manufacture of semiconductor device
JPS63237567A (en) * 1987-03-26 1988-10-04 Toshiba Corp Manufacture of semiconductor device
US4916311A (en) * 1987-03-12 1990-04-10 Mitsubishi Denki Kabushiki Kaisha Ion beaming irradiating apparatus including ion neutralizer
EP0714132A3 (en) * 1994-11-22 2000-06-28 AT&T Corp. System and method for manufacturing gate oxide capacitors including wafer backside dielectric and implantation electron flood gun current control, and gate oxide capacitor made by same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549575A (en) * 1977-06-24 1979-01-24 Fujitsu Ltd Ion injection method
JPS54124687A (en) * 1978-03-20 1979-09-27 Nec Corp Production of semiconductor device
JPS5561023A (en) * 1978-10-30 1980-05-08 Fujitsu Ltd Ion injection method
JPS55107229A (en) * 1979-02-08 1980-08-16 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of manufacturing semiconductor device
JPS56164566A (en) * 1980-05-21 1981-12-17 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549575A (en) * 1977-06-24 1979-01-24 Fujitsu Ltd Ion injection method
JPS54124687A (en) * 1978-03-20 1979-09-27 Nec Corp Production of semiconductor device
JPS5561023A (en) * 1978-10-30 1980-05-08 Fujitsu Ltd Ion injection method
JPS55107229A (en) * 1979-02-08 1980-08-16 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of manufacturing semiconductor device
JPS56164566A (en) * 1980-05-21 1981-12-17 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0450751B2 (en) * 1982-06-30 1992-08-17 Tokyo Shibaura Electric Co
US4543597A (en) * 1982-06-30 1985-09-24 Tokyo Shibaura Denki Kabushiki Kaisha Dynamic semiconductor memory and manufacturing method thereof
JPS594070A (en) * 1982-06-30 1984-01-10 Toshiba Corp Semiconductor memory device and manufacture thereof
JPS5994454A (en) * 1982-11-19 1984-05-31 Nec Kyushu Ltd Semiconductor device and manufacture thereof
JPS5994450A (en) * 1982-11-19 1984-05-31 Nec Kyushu Ltd Semiconductor device
JPH0454975B2 (en) * 1982-11-19 1992-09-01 Kyushu Nippon Electric
JPS59104173A (en) * 1982-12-07 1984-06-15 Seiko Epson Corp Manufacture of thin film semiconductor device
JPS59105356A (en) * 1982-12-07 1984-06-18 Seiko Epson Corp Manufacture of matrix array
JPS60116128A (en) * 1983-11-29 1985-06-22 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPS61231753A (en) * 1985-04-08 1986-10-16 Nec Corp Mis-type dynamic random access memory device
JPS61295627A (en) * 1985-06-24 1986-12-26 Nec Kansai Ltd Ion implantation method
JPS62248223A (en) * 1986-04-21 1987-10-29 Sumitomo Eaton Noba Kk Charging-preventive method for wafer
JPS6350014A (en) * 1986-08-19 1988-03-02 Nec Corp Manufacture of semiconductor device
US4916311A (en) * 1987-03-12 1990-04-10 Mitsubishi Denki Kabushiki Kaisha Ion beaming irradiating apparatus including ion neutralizer
JPS63237567A (en) * 1987-03-26 1988-10-04 Toshiba Corp Manufacture of semiconductor device
EP0714132A3 (en) * 1994-11-22 2000-06-28 AT&T Corp. System and method for manufacturing gate oxide capacitors including wafer backside dielectric and implantation electron flood gun current control, and gate oxide capacitor made by same

Also Published As

Publication number Publication date
JPH033388B2 (en) 1991-01-18

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