JPS549575A - Ion injection method - Google Patents
Ion injection methodInfo
- Publication number
- JPS549575A JPS549575A JP7533077A JP7533077A JPS549575A JP S549575 A JPS549575 A JP S549575A JP 7533077 A JP7533077 A JP 7533077A JP 7533077 A JP7533077 A JP 7533077A JP S549575 A JPS549575 A JP S549575A
- Authority
- JP
- Japan
- Prior art keywords
- ion injection
- injection method
- conductive material
- material film
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To decrease the charge storage on the surface, to eliminate the discharge from the wafer and thus to avoid the deterioration, by forming the conductive material film avoiding the chip pattern of the insulator wafer to which the ion is to be injected and then carrying out the ion injection while giving earth to the conductive material film.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7533077A JPS549575A (en) | 1977-06-24 | 1977-06-24 | Ion injection method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7533077A JPS549575A (en) | 1977-06-24 | 1977-06-24 | Ion injection method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS549575A true JPS549575A (en) | 1979-01-24 |
Family
ID=13573130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7533077A Pending JPS549575A (en) | 1977-06-24 | 1977-06-24 | Ion injection method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS549575A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5775463A (en) * | 1980-10-28 | 1982-05-12 | Nec Corp | Manufacture of semiconductor device |
JPS5775424A (en) * | 1980-10-29 | 1982-05-12 | Nec Corp | Ion implantation |
JPS57100768A (en) * | 1980-12-16 | 1982-06-23 | Nec Corp | Manufacture of field effect semiconductor device |
JPS62248223A (en) * | 1986-04-21 | 1987-10-29 | Sumitomo Eaton Noba Kk | Charging-preventive method for wafer |
-
1977
- 1977-06-24 JP JP7533077A patent/JPS549575A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5775463A (en) * | 1980-10-28 | 1982-05-12 | Nec Corp | Manufacture of semiconductor device |
JPH033388B2 (en) * | 1980-10-28 | 1991-01-18 | Nippon Electric Co | |
JPS5775424A (en) * | 1980-10-29 | 1982-05-12 | Nec Corp | Ion implantation |
JPS57100768A (en) * | 1980-12-16 | 1982-06-23 | Nec Corp | Manufacture of field effect semiconductor device |
JPS62248223A (en) * | 1986-04-21 | 1987-10-29 | Sumitomo Eaton Noba Kk | Charging-preventive method for wafer |
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